BUZ30AH MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUZ30AH datasheet

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BUZ 30A H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated . Halogen-free according to IEC61249-2--21 Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 30A H 200 V 21 A 0.13 PG-TO-220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 26 C 21 Pulsed drain current IDpuls TC = 25 C 84 Aval

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isc N-Channel MOSFET Transistor BUZ30AH IBUZ30AH FEATURES Static drain-source on-resistance RDS(on) 130m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current,high speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

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BUZ30A H3045A . Halogen-free according to IEC61249-2-21 Pb-free H3045A PG-TO263-3 Yes Rev. 2.2 2010-07-02 BUZ30A H3045A 2010-07-02 Rev. 2.2 BUZ30A H3045A 2010-07-02 Rev 2.2 BUZ30A H3045A 2010-07-02 Rev 2.2 BUZ30A H3045A 2010-07-02 Rev 2.2 BUZ30A H3045A 2010-07-02 Rev 2.2 BUZ30A H3045A 10 10 1 0.1 0.01 Rev 2.2 2010-07-02 BUZ30A H3045A 2010-07-02 Rev 2.2

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Isc N-Channel MOSFET Transistor BUZ30AH3045A FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )