IPA50R350CP Todos los transistores

 

IPA50R350CP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPA50R350CP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 32 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 46 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm

Encapsulados: TO220FP

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IPA50R350CP datasheet

 ..1. Size:578K  infineon
ipa50r350cp.pdf pdf_icon

IPA50R350CP

IPA50R350CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features @Tjmax 550 V !0 V )DL HI ;>I / M . , + g 0. 50 DS(on) max V 2 AIG6 ADL IN V -7 ;G A 69 EA6I>C6CI 1, #JAA - ( 0) V . J6iified 688DG9>C 01>53 10 2;= V %6G9 6C9 HD;IHL>I8=>C

 ..2. Size:200K  inchange semiconductor
ipa50r350cp.pdf pdf_icon

IPA50R350CP

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R350CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

 7.1. Size:561K  infineon
ipa50r399cp.pdf pdf_icon

IPA50R350CP

IPA50R399CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features @Tjmax 550 V !0 V )DL HI ;>I / M . C6CI 0) 1, #JAA - ( V . J6Ai;> 9 688DG9>C 01>53 10 2;= V %6G9 6C9 HD;IHL>I8=>C

 7.2. Size:2917K  infineon
ipa50r380ce.pdf pdf_icon

IPA50R350CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R380CE Data Sheet Rev. 2.0, 2010-08-27 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CE IPI50R380CE 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (S

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