IPA60R280C6 Todos los transistores

 

IPA60R280C6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPA60R280C6

Código: 6R280C6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 32 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 13.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.5 V

Carga de compuerta (Qg): 43 nC

Tiempo de elevación (tr): 11 nS

Conductancia de drenaje-sustrato (Cd): 60 pF

Resistencia drenaje-fuente RDS(on): 0.28 Ohm

Empaquetado / Estuche: TO220FP

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IPA60R280C6 Datasheet (PDF)

1.1. ipa60r280c6 2 1.pdf Size:1432K _infineon

IPA60R280C6
IPA60R280C6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJ1.2. ipa60r280p6.pdf Size:2865K _infineon

IPA60R280C6
IPA60R280C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R280P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPW60R280P6, IPP60R280P6, IPA60R280P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordi

 1.3. ipa60r280cfd7.pdf Size:1140K _infineon

IPA60R280C6
IPA60R280C6

IPA60R280CFD7 MOSFET PG-TO 220 FP 600V CoolMOSª CFD7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ CFD7 is the successor to the CoolMOS™ CFD2 series and is an optimized platform tailored to target soft switching applications such

1.4. ipa60r280e6 2.0.pdf Size:1975K _infineon

IPA60R280C6
IPA60R280C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R280E6 Data Sheet Rev. 2.0, 2010-04-09 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R280E6, IPA60R280E6 IPW60R280E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principl

 1.5. ipa60r280p7.pdf Size:1105K _infineon

IPA60R280C6
IPA60R280C6

IPA60R280P7 MOSFET PG-TO 220 FP 600V CoolMOSª P7 Power Device The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFET

1.6. ipa60r280cfd7.pdf Size:201K _inchange_semiconductor

IPA60R280C6
IPA60R280C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R280CFD7 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATI

1.7. ipa60r280e6.pdf Size:245K _inchange_semiconductor

IPA60R280C6
IPA60R280C6

isc N-Channel MOSFET Transistor IPA60R280E6,IIPA60R280E6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOL

1.8. ipa60r280c6.pdf Size:202K _inchange_semiconductor

IPA60R280C6
IPA60R280C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R280C6 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAM

1.9. ipa60r280p7.pdf Size:201K _inchange_semiconductor

IPA60R280C6
IPA60R280C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R280P7 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATING

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