IPA60R385CP Todos los transistores

 

IPA60R385CP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPA60R385CP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 38 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.385 Ohm
   Paquete / Cubierta: TO220FP

 Búsqueda de reemplazo de MOSFET IPA60R385CP

 

IPA60R385CP Datasheet (PDF)

 ..1. Size:612K  infineon
ipa60r385cp.pdf

IPA60R385CP
IPA60R385CP

IPA60R385CPCoolMOS Power TransistorProduct SummaryFeaturesV 1j max 650 VDSV )DL:HI ;>I / M .ON GR @T Y 0. 85 DS(on) max jV 2 AIG6 ADL IN1)V . J6A>;>:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold comp

 ..2. Size:201K  inchange semiconductor
ipa60r385cp.pdf

IPA60R385CP
IPA60R385CP

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R385CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 6.1. Size:1282K  infineon
ipa60r380e6.pdf

IPA60R385CP
IPA60R385CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.0, 2010-04-09FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R380E6, IPA60R380E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

 6.2. Size:2739K  infineon
ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf

IPA60R385CP
IPA60R385CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R380P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPP60R380P6, IPA60R380P6, IPD60R380P6TO-220 TO-220 FP DPAK1 Descriptiontab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accor

 6.3. Size:1201K  infineon
ipa60r380c6.pdf

IPA60R385CP
IPA60R385CP

MOSFET+ =L9D - PA

 6.4. Size:1368K  infineon
ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf

IPA60R385CP
IPA60R385CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R380C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R380C6, IPI60R380C6IPB60R380C6, IPP60R380C6IPA60R380C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

 6.5. Size:2540K  infineon
ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf

IPA60R385CP
IPA60R385CP

IPB60R380P6, IPP60R380P6, IPD60R380P6,IPA60R380P6MOSFETDPAK PG-TO 220 DPAK600V CoolMOS P6 Power Transistortab tabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and22pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 133experience of the leading SJ MOSFET suppli

 6.6. Size:943K  infineon
ipp60r380e6 ipa60r380e6 ipd60r380e6.pdf

IPA60R385CP
IPA60R385CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.6FinalPower Management & Multimarket C lMO e n i t I I I D O O D 1 Descriptint b tabC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin iple n 2pi neee b In ine n e n l ie C

 6.7. Size:223K  inchange semiconductor
ipa60r380p6.pdf

IPA60R385CP
IPA60R385CP

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R380P6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 6.8. Size:223K  inchange semiconductor
ipa60r380e6.pdf

IPA60R385CP
IPA60R385CP

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R380E6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 6.9. Size:203K  inchange semiconductor
ipa60r380c6.pdf

IPA60R385CP
IPA60R385CP

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPA60R380C6FEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stages, hard switching PWM stages and resonant switchingPC Silverbox, Adapte

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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