IPA90R500C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPA90R500C3
Código: 9R500C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 VQgⓘ - Carga de la puerta: 68 nC
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 83 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Paquete / Cubierta: TO220FP
Búsqueda de reemplazo de MOSFET IPA90R500C3
IPA90R500C3 Datasheet (PDF)
ipa90r500c3.pdf
IPA90R500C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.5DS(on),max J Extreme dv/dt ratedQ 68 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220 FP Ultra low gate chargeCoolMOS
ipa90r500c3.pdf
isc N-Channel MOSFET Transistor IPA90R500C3, IIPA90R500C3FEATURES Drain-source on-resistance:RDS(on) 0.5@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
ipa90r1k2c3.pdf
IPA90R1K2C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 1.2DS(on),max J Extreme dv/dt ratedQ 28 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220 FP Ultra low gate chargeCoolMOS 9
ipa90r340c3.pdf
IPA90R340C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.34DS(on),max J Extreme dv/dt ratedQ 94 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO220 Fullpak PG-TO220 FP
ipa90r800c3.pdf
IPA90R800C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.8DS(on),max J Extreme dv/dt ratedQ 42 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220 FP Ultra low gate chargeCoolMOS
ipa90r1k0c3.pdf
IPA90R1K0C3CIMOS $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures @ =25C 900 V!0 U )DL:HI ;>I / M .ON g X 1.0 WDS(on) max U "MIG:B: 9K 9I G6I:9 4 nCg typU %>A>INU . J6A>;>:9 for industrial grade applications 688DG9>CC6CIU 2 AIG6 ADL 53:10 2;=U . J6
ipa90r1k2c3.pdf
isc N-Channel MOSFET Transistor IPA90R1K2C3IIPA90R1K2C3FEATURESStatic drain-source on-resistance:RDS(on) 1.2Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeABSOLUTE MAXIMUM RATINGS(T =25)a
ipa90r340c3.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA90R340C3FEATURESWith TO-220F PackageDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R = 0.34(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T
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