IPB100N04S2-04 Todos los transistores

 

IPB100N04S2-04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPB100N04S2-04
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 46 nS
   Cossⓘ - Capacitancia de salida: 2200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
   Paquete / Cubierta: TO263
 

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IPB100N04S2-04 Datasheet (PDF)

 ..1. Size:153K  infineon
 ipb100n04s2-04 ipp100n04s2-04 ipp100n04s2-04 ipb100n04s2-04.pdf pdf_icon

IPB100N04S2-04

IPB100N04S2-04IPP100N04S2-04OptiMOS Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel - Enhancement modeR (SMD version) 3.3mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedT

 3.1. Size:153K  infineon
 ipb100n04s2l-03 ipp100n04s2l-03 ipp100n04s2l-03 ipb100n04s2l-03.pdf pdf_icon

IPB100N04S2-04

IPB100N04S2L-03IPP100N04S2L-03OptiMOS Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel Logic Level - Enhancement modeR (SMD version) 3.0mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala

 4.1. Size:159K  infineon
 ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf pdf_icon

IPB100N04S2-04

IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

 4.2. Size:135K  infineon
 ipb100n04s4-h2 ipi100n04s4-h2 ipp100n04s4-h2.pdf pdf_icon

IPB100N04S2-04

IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mWDS(on),maxI 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType

MOSTRAR MÁS

Otros transistores... IPA65R600C6 , IPA65R600E6 , IPA65R660CFD , IPA90R1K0C3 , IPA90R1K2C3 , IPA90R340C3 , IPA90R500C3 , IPA90R800C3 , 12N60 , IPB100N04S2L-03 , IPB100N04S3-03 , IPB100N06S2-05 , IPB100N06S2L-05 , IPB100N08S2-07 , IPB100N08S2L-07 , IPB100N10S3-05 , IPB100P03P3L-04 .

History: IXFT13N100 | IRFS9N60APBF

 

 
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