IPB100N10S3-05 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB100N10S3-05
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 300 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 17 nS
Cossⓘ - Capacitancia de salida: 2520 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de IPB100N10S3-05 MOSFET
- Selecciónⓘ de transistores por parámetros
IPB100N10S3-05 datasheet
..1. Size:186K infineon
ipb100n10s3-05 ipi100n10s3-05 ipp100n10s3-05.pdf 
IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 4.8 m DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Aval
..2. Size:191K infineon
ipi100n10s3-05 ipp100n10s3-05 ipb100n10s3-05.pdf 
IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 4.8 m DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Aval
6.1. Size:405K infineon
ipb100n12s3-05 ipi100n12s3-05 ipp100n12s3-05.pdf 
IPB100N12S3-05 IPI100N12S3-05, IPP100N12S3-05 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max (SMD version) 4.8 mW ID 100 A Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temper
7.1. Size:159K infineon
ipb100n06s2l-05 ipp100n06s2l-05.pdf 
IPB100N06S2L-05 IPP100N06S2L-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.4 m DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala
7.2. Size:159K infineon
ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf 
IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 m DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty
7.3. Size:158K infineon
ipb100n08s2-07 ipp100n08s2-07 ipi100n08s2-07 ipp100n08s2-07 ipb100n08s2-07 ipi100n08s2-07.pdf 
IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 6.8 m DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
7.4. Size:153K infineon
ipb100n04s2-04 ipp100n04s2-04 ipp100n04s2-04 ipb100n04s2-04.pdf 
IPB100N04S2-04 IPP100N04S2-04 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R (SMD version) 3.3 m DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested T
7.5. Size:195K infineon
ipb100n06s3-04.pdf 
IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T2 Power-Transistor Product Summary V 55 V DS R (SMD version) 4.1 m DS(on),max I 100 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avala
7.6. Size:135K infineon
ipb100n04s4-h2 ipi100n04s4-h2 ipp100n04s4-h2.pdf 
IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 mW DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type
7.8. Size:154K infineon
ipb100n08s2l-07 ipp100n08s2l-07 ipp100n08s2l-07 ipb100n08s2l-07.pdf 
IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel Logic Level - Enhancement mode R (SMD version) 6.5 m DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala
7.9. Size:153K infineon
ipb100n04s2l-03 ipp100n04s2l-03 ipp100n04s2l-03 ipb100n04s2l-03.pdf 
IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel Logic Level - Enhancement mode R (SMD version) 3.0 m DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala
7.10. Size:155K infineon
ipb100n06s2-05 ipp100n06s2-05.pdf 
IPB100N06S2-05 IPP100N06S2-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 4.7 m DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested T
Otros transistores... IPA90R800C3
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