IPB120N04S3-02 Todos los transistores

 

IPB120N04S3-02 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB120N04S3-02

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 3000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm

Encapsulados: TO263

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IPB120N04S3-02 datasheet

 ..1. Size:191K  infineon
ipb120n04s3-02 ipi120n04s3-02 ipp120n04s3-02 ipp120n04s3 ipb120n04s3 ipi120n04s3-02.pdf pdf_icon

IPB120N04S3-02

IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 2.0 m DS(on),max I 120 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rd

 4.1. Size:203K  infineon
ipb120n04s4l-02.pdf pdf_icon

IPB120N04S3-02

Data Sheet IPB120N04S4L-02 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on),max 1.7 m ID 120 A Features PG-TO263-3-2 N-channel Logic Level - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB120N04S4L-02 PG-TO263-3- 4N04L02

 4.2. Size:159K  infineon
ipb120n04s4-02 ipi120n04s4-02 ipp120n04s4-02.pdf pdf_icon

IPB120N04S3-02

IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.8 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty

 4.3. Size:164K  infineon
ipi120n04s4-02 ipp120n04s4-02 ipb120n04s4-02.pdf pdf_icon

IPB120N04S3-02

IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.8 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty

Otros transistores... IPB100N04S2L-03 , IPB100N04S3-03 , IPB100N06S2-05 , IPB100N06S2L-05 , IPB100N08S2-07 , IPB100N08S2L-07 , IPB100N10S3-05 , IPB100P03P3L-04 , SPP20N60C3 , IPB120N06S4-03 , IPB160N04S2-03 , IPB160N04S2L-03 , IPB160N04S3-H2 , IPB180N03S4L-H0 , IPB180N04S3-02 , IPB180N04S4-00 , IPB180N06S4-H1 .

History: IRL7486MTRPBF

 

 

 

 

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