IPB180N03S4L-H0 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPB180N03S4L-H0
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 3720 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00095 Ohm
   Paquete / Cubierta: TO263-7

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IPB180N03S4L-H0 Datasheet (PDF)

0.1. Size:161K infineon
ipb180n03s4l-h0 ipb180n03s4l-h0 ds 1 0.pdf

IPB180N03S4L-H0OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 0.95mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N03S4L-H0 PG-TO263-7-3 4N

1.1. Size:161K infineon
ipb180n03s4l-01 ipb180n03s4l-01 ds 1 0.pdf

IPB180N03S4L-01OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 1.05mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N03S4L-01 PG-TO263-7-3 4N

6.1. Size:351K infineon
ipb180n04s4-00.pdf

IPB180N04S4-00OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 0.98mWID 180 AFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-00 PG-TO263-7-3 4N0400Maxim

6.2. Size:201K infineon
ipb180n08s4-02.pdf

IPB180N08S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR 2.2mWDS(on),maxI 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high IDType Package MarkingIPB180N08

6.3. Size:176K infineon
ipb180n06s4-h1 ipb180n06s4-h1 ds 10.pdf

IPB180N06S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 1.7mDS(on),maxI 180 ADFeaturesPG-TO263-7-3 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high IDType Package MarkingIPB180N0

6.4. Size:162K infineon
ipb180n04s4-00 ds 1 0.pdf

IPB180N04S4-00OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 0.98mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-00 PG-TO263-7-3 4N040

6.5. Size:162K infineon
ipb180n04s4-h0 ipb180n04s4-h0 ds 1 0.pdf

IPB180N04S4-H0OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.1mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-H0 PG-TO263-7-3 4N04H0

6.6. Size:213K infineon
ipb180n04s4l-01.pdf

Data Sheet IPB180N04S4L-01OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.2mID 180 AFeatures N-channel Logic Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB180N04S4L-01 PG-TO263-7-3 4N04L01Ma

6.7. Size:213K infineon
ipb180n04s4l-h0.pdf

Data Sheet IPB180N04S4L-H0OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.0mID 180 AFeatures N-channel Logic Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB180N04S4L-H0 PG-TO263-7-3 4N04LH0Ma

6.8. Size:183K infineon
ipb180n04s3-02 ipb180n04s3-02 ds 1 0.pdf

IPB180N04S3-02OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 1.5mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType MarkingPackageIPB180N04S3-02 PG-

6.9. Size:162K infineon
ipb180n04s4-01 ipb180n04s4-01 ds 1 0.pdf

IPB180N04S4-01OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.3mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-01 PG-TO263-7-3 4N0401

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Liste

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