IPB45P03P4L-11 Todos los transistores

 

IPB45P03P4L-11 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPB45P03P4L-11
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 58 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 835 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0108 Ohm
   Paquete / Cubierta: TO263
 

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IPB45P03P4L-11 Datasheet (PDF)

 ..1. Size:173K  infineon
 ipb45p03p4l-11 ipi45p03p4l-11 ipp45p03p4l-11.pdf pdf_icon

IPB45P03P4L-11

IPB45P03P4L-11IPI45P03P4L-11, IPP45P03P4L-11OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR (SMD Version) 10.8mDS(on) I -45 ADFeatures P-channel - Logic Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanch

 9.1. Size:186K  infineon
 ipb45n06s3-16.pdf pdf_icon

IPB45P03P4L-11

IPB45N06S3-16IPI45N06S3-16, IPP45N06S3-16OptiMOS-T2 Power-TransistorProduct SummaryV 55 VDSR (SMD version) 15.4mDS(on),maxI 45 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanch

 9.2. Size:159K  infineon
 ipb45n06s4-09 ipi45n06s4-09 ipp45n06s4-09.pdf pdf_icon

IPB45P03P4L-11

IPB45N06S4-09IPI45N06S4-09, IPP45N06S4-09OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 9.2mDS(on),max I 45 ADFeatures N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB45N06S4-09 PG-TO263-

 9.3. Size:170K  infineon
 ipb45n06s4l-08 ipi45n06s4l-08 ipp45n06s4l-08 ipp45n06s4l ipb45n06s4l ipi45n06s4l-08.pdf pdf_icon

IPB45P03P4L-11

IPB45N06S4L-08IPI45N06S4L-08, IPP45N06S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 7.9mDS(on),max I 45 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

MOSTRAR MÁS

Otros transistores... IPB160N04S3-H2 , IPB180N03S4L-H0 , IPB180N04S3-02 , IPB180N04S4-00 , IPB180N06S4-H1 , IPB22N03S4L-15 , IPB45N06S4-09 , IPB45N06S4L-08 , IRFP450 , IPB47N10S-33 , IPB47N10SL-26 , IPB50N10S3L-16 , IPB70N04S3-07 , IPB70N10S3-12 , IPB70N10S3L-12 , IPB70N10SL-16 , IPB77N06S2-12 .

History: SI7682DP | GP2M002A060XG

 

 
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