IPB70N04S3-07 Todos los transistores

 

IPB70N04S3-07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPB70N04S3-07
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 79 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 610 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm
   Paquete / Cubierta: TO263
 

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IPB70N04S3-07 Datasheet (PDF)

 4.1. Size:186K  infineon
 ipp70n04s3 ipb70n04s3 ipi70n04s3-07.pdf pdf_icon

IPB70N04S3-07

IPB70N04S3-07IPI70N04S3-07, IPP70N04S3-07OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 6.2mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche t

 5.1. Size:164K  infineon
 ipb70n04s4-06 ipi70n04s4-06 ipp70n04s4-06.pdf pdf_icon

IPB70N04S3-07

IPB70N04S4-06IPI70N04S4-06, IPP70N04S4-06OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 6.2mDS(on),max I 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

 8.1. Size:405K  infineon
 ipb70n12s3-11 ipi70n12s3-11 ipp70n12s3-11.pdf pdf_icon

IPB70N04S3-07

IPB70N12S3-11IPI70N12S3-11, IPP70N12S3-11OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max (SMD version) 11.3 mW ID 70 A Features OptiMOSTM - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperatur

 8.2. Size:124K  infineon
 ipi70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipi70n10sl-16.pdf pdf_icon

IPB70N04S3-07

IPI70N10SL-16IPP70N10SL-16, IPB70N10SL-16SIPMOS Power-TransistorProduct SummaryFeatureVDS100 V N-ChannelRDS(on) 16 m Enhancement modeID 70 A Logic LevelP-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175C operating temperature Avalanche rated 2 dv/dt rated32 Green Package 1(lead free)P-TO220-3-1Type Package Ordering Code MarkingIPP7

MOSTRAR MÁS

Otros transistores... IPB180N06S4-H1 , IPB22N03S4L-15 , IPB45N06S4-09 , IPB45N06S4L-08 , IPB45P03P4L-11 , IPB47N10S-33 , IPB47N10SL-26 , IPB50N10S3L-16 , IRFZ24N , IPB70N10S3-12 , IPB70N10S3L-12 , IPB70N10SL-16 , IPB77N06S2-12 , IPB80N03S4L-02 , IPB80N03S4L-03 , IPB80N04S2-04 , IPB80N04S2-H4 .

History: 2N7002KT1G | AP6N1R7CDT | VP3203N3 | GP2M007A065XG | SPI21N50C3 | CHM1305WGP | AP4501AGEM-HF

 

 
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