IPB70N04S3-07 Todos los transistores

 

IPB70N04S3-07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB70N04S3-07

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 79 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 80 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 40 nC

Resistencia drenaje-fuente RDS(on): 0.0062 Ohm

Empaquetado / Estuche: PGTO263

Búsqueda de reemplazo de MOSFET IPB70N04S3-07

 

IPB70N04S3-07 Datasheet (PDF)

1.1. ipb70n04s4-06 ipi70n04s4-06 ipp70n04s4-06.pdf Size:164K _update-mosfet

IPB70N04S3-07
IPB70N04S3-07

IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 6.2 mΩ DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type P

1.2. ipp70n04s3 ipb70n04s3 ipi70n04s3-07.pdf Size:186K _infineon

IPB70N04S3-07
IPB70N04S3-07

IPB70N04S3-07 IPI70N04S3-07, IPP70N04S3-07 OptiMOS-T Power-Transistor Product Summary V 40 V DS R (SMD version) 6.2 m? DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package

 4.1. ipp70n10s3l ipb70n10s3l ipi70n10s3l-12.pdf Size:187K _infineon

IPB70N04S3-07
IPB70N04S3-07

IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS-T Power-Transistor Product Summary V 100 V DS R (SMD version) 12 m? DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Pac

4.2. ipp70n10s3 ipb70n10s3 ipi70n10s3-12.pdf Size:186K _infineon

IPB70N04S3-07
IPB70N04S3-07

IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 OptiMOS-T Power-Transistor Product Summary V 100 V DS R (SMD version) 11.3 m? DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Pack

 4.3. ipp70n10sl-16 ipb70n10sl-16 ipi70n10sl-16.pdf Size:124K _infineon

IPB70N04S3-07
IPB70N04S3-07

IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 SIPMOS? Power-Transistor Product Summary Feature VDS 100 V N-Channel RDS(on) 16 m? Enhancement mode ID 70 A Logic Level P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175C operating temperature Avalanche rated 2 dv/dt rated 3 2 Green Package 1 (lead free) P-TO220-3-1 Type Package Ordering Code Marking IPP70N10SL-16 PG-TO220-3-1

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


IPB70N04S3-07
  IPB70N04S3-07
  IPB70N04S3-07
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUXFS4409 | AUIRLZ24NS | AUIRLZ24NL | AUIRLU024Z | AUIRLSL4030 | AUIRLS3114Z | AUIRLR3705ZTR | AUIRLR3410TRL | AUIRLR2905ZTR | AUIRLR2905TR | AUIRLR2703TR | AUIRLR024NTR | AUIRLL024Z | AUIRL7766M2TR | AUIRL7736M2TR |

 

 

 
Back to Top