IPB70N04S3-07 Todos los transistores

 

IPB70N04S3-07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB70N04S3-07

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 79 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 80 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 40 nC

Resistencia drenaje-fuente RDS(on): 0.0062 Ohm

Empaquetado / Estuche: PGTO263

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IPB70N04S3-07 Datasheet (PDF)

1.1. ipp70n04s3 ipb70n04s3 ipi70n04s3-07.pdf Size:186K _infineon

IPB70N04S3-07
IPB70N04S3-07

IPB70N04S3-07 IPI70N04S3-07, IPP70N04S3-07 OptiMOS-T Power-Transistor Product Summary V 40 V DS R (SMD version) 6.2 m? DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package

4.1. ipp70n10s3l ipb70n10s3l ipi70n10s3l-12.pdf Size:187K _infineon

IPB70N04S3-07
IPB70N04S3-07

IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS-T Power-Transistor Product Summary V 100 V DS R (SMD version) 12 m? DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Pac

4.2. ipp70n10sl-16 ipb70n10sl-16 ipi70n10sl-16.pdf Size:124K _infineon

IPB70N04S3-07
IPB70N04S3-07

IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 SIPMOS? Power-Transistor Product Summary Feature VDS 100 V N-Channel RDS(on) 16 m? Enhancement mode ID 70 A Logic Level P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175C operating temperature Avalanche rated 2 dv/dt rated 3 2 Green Package 1 (lead free) P-TO220-3-1 Type Package Ordering Code Marking IPP70N10SL-16 PG-TO220-3-1

 4.3. ipp70n10s3 ipb70n10s3 ipi70n10s3-12.pdf Size:186K _infineon

IPB70N04S3-07
IPB70N04S3-07

IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 OptiMOS-T Power-Transistor Product Summary V 100 V DS R (SMD version) 11.3 m? DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Pack

Otros transistores... IPB180N06S4-H1 , IPB22N03S4L-15 , IPB45N06S4-09 , IPB45N06S4L-08 , IPB45P03P4L-11 , IPB47N10S-33 , IPB47N10SL-26 , IPB50N10S3L-16 , 2SK170 , IPB70N10S3-12 , IPB70N10S3L-12 , IPB70N10SL-16 , IPB77N06S2-12 , IPB80N03S4L-02 , IPB80N03S4L-03 , IPB80N04S2-04 , IPB80N04S2-H4 .

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: RJL6013DPP | RJL6012DPP | RJL5014DPP | RJL5013DPP | RJL5012DPP | RJK6036DP3-A0 | RJK6032DPH-E0 | RJK6025DPH-E0 | RJK6024DP3-A0 | RJK6013DPP-E0 | RJK6002DPH-E0 | RJK6002DJE | RJK5032DPH-E0 | RJK5032DPD | RJK5014DPP-E0 |

 

 

 
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