IPB80N04S2-04 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB80N04S2-04 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45 nS
Cossⓘ - Capacitancia de salida: 2200 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
Encapsulados: TO263
📄📄 Copiar
Búsqueda de reemplazo de IPB80N04S2-04 MOSFET
- Selecciónⓘ de transistores por parámetros
IPB80N04S2-04 datasheet
ipb80n04s2-04 ipp80n04s2-04 ipi80n04s2-04 ipp80n04s2-04 ipb80n04s2-04 ipi80n04s2-04.pdf
IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R (SMD version) 3.4 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
ipb80n04s2-04.pdf
isc N-Channel MOSFET Transistor IPB80N04S2-04 FEATURES Drain Current I 80A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 3.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching Switching regulator, DC-DC conve
ipb80n04s2-h4 ipp80n04s2-h4 ipi80n04s2-h4 ipp80n04s2 ipb80n04s2 ipi80n04s2-h4.pdf
IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary V 40 V DS R (SMD version) 3.7 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Ultra low Rds(on) 100% Avalanche tested Gre
ipp80n04s2l-03 ipb80n04s2l-03.pdf
IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel Logic Level - Enhancement mode R (SMD version) 3.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
Otros transistores... IPB50N10S3L-16, IPB70N04S3-07, IPB70N10S3-12, IPB70N10S3L-12, IPB70N10SL-16, IPB77N06S2-12, IPB80N03S4L-02, IPB80N03S4L-03, IRF2807, IPB80N04S2-H4, IPB80N04S2L-03, IPB80N04S3-03, IPB80N04S3-04, IPB80N04S3-06, IPB80N04S3-H4, IPB80N04S4-04, IPB80N04S4L-04
Parámetros del MOSFET. Cómo se afectan entre sí.
History: SI7946ADP | UTT60P03
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: CS95118 | CS85105A | CS75N45 | CS72N12 | CS55N50 | CS48N75A | CS40N27 | MSQ60P04D | MSQ40P07D | MSQ30P40D | MSQ30P15 | MSQ30P07D | MSQ100N03D | MSHM60P14 | MSHM40N085 | MSHM30N46
Popular searches
rfp50n06 | bd140 datasheet | tip2955 | tip35 | 2sk117 | irf9540n datasheet | ss8050 | irfp4668
