IPB80N04S2-04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB80N04S2-04
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 300 W
Tensión drenaje-fuente (Vds): 40 V
Corriente continua de drenaje (Id): 80 A
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 0.0034 Ohm
Empaquetado / Estuche: PGTO263
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IPB80N04S2-04 Datasheet (PDF)
1.1. ipp80n04s4-03 ipb80n04s4-03 ipi80n04s4-03.pdf 
Size:158K _infineon
IPB80N04S4-03 IPI80N04S4-03, IPP80N04S4-03 OptiMOS-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 3.3 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB8
1.2. ipp80n04s4-04 ipb80n04s4-04 ipi80n04s4-04.pdf Size:160K _infineon
IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04 OptiMOS-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.2 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB8
1.3. ipp80n04s2l-03 ipb80n04s2l-03 green.pdf Size:153K _infineon
IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel Logic Level - Enhancement mode R (SMD version) 3.1 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package
1.4. ipp80n04s2-04 ipb80n04s2-04 ipi80n04s2-04 green.pdf Size:159K _infineon
IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R (SMD version) 3.4 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested
1.5. ipp80n04s3 ipb80n04s3 ipi80n04s3.pdf Size:188K _infineon
IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 OptiMOS-T Power-Transistor Product Summary V 40 V DS R (SMD version) 5.4 m? DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package
1.6. ipp80n04s3 ipb80n04s3 ipi80n04s3-04.pdf Size:187K _infineon
IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS-T Power-Transistor Product Summary V 40 V DS R (SMD version) 3.8 m? DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package
1.7. ipp80n04s2 ipb80n04s2 ipi80n04s2-h4.pdf Size:190K _infineon
IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary V 40 V DS R (SMD version) 3.7 m? DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Ultra low Rds(on) 100% Avalanche tested Green product (RoHS compl
1.8. ipp80n04s4l-04 ipb80n04s4l-04 ipi80n04s4l-04.pdf Size:159K _infineon
IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.0 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking I
Otros transistores... IPB50N10S3L-16 , IPB70N04S3-07 , IPB70N10S3-12 , IPB70N10S3L-12 , IPB70N10SL-16 , IPB77N06S2-12 , IPB80N03S4L-02 , IPB80N03S4L-03 , IRFP250N , IPB80N04S2-H4 , IPB80N04S2L-03 , IPB80N04S3-03 , IPB80N04S3-04 , IPB80N04S3-06 , IPB80N04S3-H4 , IPB80N04S4-04 , IPB80N04S4L-04 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: WFD5N65L | W15NK90Z | VN1206N5 | TK13A60W | SUP70060E | STP140N6F7 | STH140N6F7 | STD140N6F7 | SIHG47N60AEF | R6018JNX | PSMN3R7-100BSE | P75NF75 | NVD4C05NT4G | NTHL040N65S3F | MTD300N20J3 |