APT50M85JVFR Todos los transistores

 

APT50M85JVFR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT50M85JVFR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 500 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 50 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 17 nS

Conductancia de drenaje-sustrato (Cd): 1240 pF

Resistencia drenaje-fuente RDS(on): 0.085 Ohm

Empaquetado / Estuche: SOT227

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APT50M85JVFR Datasheet (PDF)

1.1. apt50m85jvr.pdf Size:74K _apt

APT50M85JVFR
APT50M85JVFR

APT50M85JVR 500V 50A 0.085Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche

1.2. apt50m85jvfr.pdf Size:76K _apt

APT50M85JVFR
APT50M85JVFR

APT50M85JVFR 500V 50A 0.085Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Fast Recovery Body Diode

 2.1. apt50m85b2vfrg apt50m85lvfrg.pdf Size:137K _update_mosfet

APT50M85JVFR
APT50M85JVFR

APT50M85B2VFR APT50M85LVFR Ω 500V 56A 0.085Ω Ω Ω Ω B2VFR POWER MOS V® FREDFET T-MAX™ TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout

2.2. apt50m85lvr.pdf Size:40K _update_mosfet

APT50M85JVFR
APT50M85JVFR

APT50M85B2VR APT50M85LVR 500V 56A 0.085W B2VR POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVR • Identical Specificatio

 2.3. apt50m85b2vfr.pdf Size:39K _apt

APT50M85JVFR
APT50M85JVFR

APT50M85B2VFR APT50M85LVFR 500V 56A 0.085W B2VFR POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVFR • Identical

2.4. apt50m85b2vr.pdf Size:36K _apt

APT50M85JVFR
APT50M85JVFR

APT50M85B2VR APT50M85LVR 500V 56A 0.085W B2VR POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVR • Identical Specificatio

Otros transistores... APT5028SVR , APT5030AVR , APT5032CVR , APT5040CNR , APT50M50JVFR , APT50M50JVR , APT50M50PVR , APT50M60JN , 2SK2545 , APT50M85JVR , APT6013JVR , APT6015B2VR , APT6015JN , APT6015JVR , APT6015LVR , APT6017WVR , APT6020LVR .

 
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