IPB80N06S4L-07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPB80N06S4L-07
   Código: 4N06L07
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 79 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 58 nC
   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 980 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0064 Ohm
   Paquete / Cubierta: TO263

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IPB80N06S4L-07 Datasheet (PDF)

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ipb80n06s4l-07 ipi80n06s4l-07 ipp80n06s4l-07 ipp80n06s4l ipb80n06s4l ipi80n06s4l-07.pdf

IPB80N06S4L-07IPI80N06S4L-07, IPP80N06S4L-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 6.4mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

1.1. Size:174K infineon
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IPB80N06S4L-05IPI80N06S4L-05, IPP80N06S4L-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 4.8mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

1.2. Size:170K infineon
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4.1. Size:175K infineon
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IPB80N06S4-07IPI80N06S4-07, IPP80N06S4-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 7.1mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedT

4.2. Size:171K infineon
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IPB80N06S4-05IPI80N06S4-05, IPP80N06S4-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 5.4mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedT

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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Recientemente añadidas las descripciónes de los transistores: