IPB90N06S4-04 Todos los transistores

 

IPB90N06S4-04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB90N06S4-04

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 90 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 128 nC

Resistencia drenaje-fuente RDS(on): 0.0037 Ohm

Empaquetado / Estuche: PGTO263

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IPB90N06S4-04 Datasheet (PDF)

1.1. ipp90n06s4l ipb90n06s4l ipi90n06s4l-04 ds 10.pdf Size:169K _infineon

IPB90N06S4-04
IPB90N06S4-04

IPB90N06S4L-04 IPI90N06S4L-04, IPP90N06S4L-04 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 3.4 m? DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marki

5.1. ipb90r340c3.pdf Size:911K _infineon

IPB90N06S4-04
IPB90N06S4-04

IPB90R340C3 CoolMOS™ Power Transistor Product Summary Features VDS @ TJ=25°C 900 V • Lowest figure-of-merit RON x Qg RDS(on),max @TJ=25°C 0.34 W • Extreme dv/dt rated Qg,typ 94 nC • High peak current capability • Qualified according to JEDEC1) for industrial applications PG-TO263 • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS™ 900V is desi

Otros transistores... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: RJL6013DPP | RJL6012DPP | RJL5014DPP | RJL5013DPP | RJL5012DPP | RJK6036DP3-A0 | RJK6032DPH-E0 | RJK6025DPH-E0 | RJK6024DP3-A0 | RJK6013DPP-E0 | RJK6002DPH-E0 | RJK6002DJE | RJK5032DPH-E0 | RJK5032DPD | RJK5014DPP-E0 |

 

 

 
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