2N6790 Todos los transistores

PD - 90427C IRFF220 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6790 HEXFET TRANSISTORS JANTXV2N6790 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF220 200V 0.80 3.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin

2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power Features MOSFET 3.5A, 200V The 2N6790 is an N-Channel enhancement mode silicon rDS(ON) = 0.800 gate power MOS field effect transistor designed for SOA is Power Dissipation Limited applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high

PD - 93984A REPETITIVE AVALANCHE AND dv/dt RATED IRFE220 HEXFET TRANSISTORS JANTX2N6790U SURFACE MOUNT (LCC-18) REF MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE220 100V 0.80 2.8A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features mount technology. Desinged t

Provisional Data Sheet No. PD - 9.1666A IRFE130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U HEXFET TRANSISTOR JANTXV2N6796U [REF MIL-PRF-19500/557] N-CHANNEL 100Volt, 0.18 Product Summary , HEXFET The leadless chip carrier (LCC) package represents Part Number BVDSS RDS(on) ID the logical next step in the continual evolution of IRFE130 100V 0.18 8.0A

PD -90428C IRFF320 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6792 HEXFET TRANSISTORS JANTXV2N6792 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF320 400V 1.8 2.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing

PD - 93986A IRFE420 JANTX2N6794U REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6794U HEXFET TRANSISTORS REF MIL-PRF-19500/555 SURFACE MOUNT (LCC-18) 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE420 500V 3.0 1.4A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features mount technology.

PD -90431C IRFF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798 HEXFET TRANSISTORS JANTXV2N6798 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/557 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF230 200V 0.40 5.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing

PD - 93985A IRFE320 JANTX2N6792U REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6792U HEXFET TRANSISTORS REF MIL-PRF-19500/555 SURFACE MOUNT (LCC-18) 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE320 400V 1.8 1.8A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features mount technology.

PD - 90429C IRFF420 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6794 HEXFET TRANSISTORS JANTXV2N6794 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF420 500V 3.0 1.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800 2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES Low RDS(on) Ease of Paralleling Qualified to MIL-PRF-19500/557 DESCRIPTIO

2N6796LCC4 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) POWER MOSFET 1.07 (0.040) 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 10 18 7.62 (0.300) VDSS = 100V 7.12 (0.280) 9 1 0.76 (0.030) 8 2 0.51 (0.020) ID = 7.4A 0.33 (0.013) Rad. RDS(ON) = 0.18 0.08 (0.003) 7 6 5 4 3 0.43 (0.017) Rad. 1.39 (0.05

2N6796 MECHANICAL DATA Dimensions in mm (inches) TMOS FET TRANSISTOR N CHANNEL FEATURES VDSS = 100V ID = 8A ! RDSON = 0.18

2N6798 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE TRANSISTOR FEATURES V(BR)DSS = 200V ID = 5.5A ! RDSON = 0.40

2N6794 SEME LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET BVDSS 500V ID(cont) 1.5 RDS(on) 3.0 FEATURES ! AVALANCHE ENERGY RATED

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6796 2N6796U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C un

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS JAN 2N6798 2N6798U JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltag