IPB023N06N3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPB023N06N3G Datasheet (PDF)

3.1. Size:671K infineon
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6.1. Size:583K infineon
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6.2. Size:245K infineon
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Type IPP023N04N GIPB023N04N GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS MOSFET for ORing and Uninterruptible Power Supply R 2.3mDS(on),max Qualified according to JEDEC1) for target applicationsI 90 AD N-channel Normal level Ultra-low on-resistance RDS(on) 100% Avalanche tested Pb-free plating; RoHS compliant Hal

6.3. Size:258K inchange semiconductor
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isc N-Channel MOSFET Transistor IPB023N04NFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

Otros transistores... IPB017N06N3G , IPB019N06L3G , IPB019N08N3G , IPB020N04NG , IPB020NE7N3G , IPB021N06N3G , IPB022N04LG , IPB023N04NG , IRFZ44 , IPB025N08N3G , IPB025N10N3G , IPB027N10N3G , IPB029N06N3G , IPB030N08N3G , IPB031NE7N3G , IPB034N03LG , IPB034N06L3G .