IPB038N12N3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPI041N12N3 GIPP041N12N3 G IPB038N12N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 120 V N-channel, normal levelRDS(on),max (TO-263) 3.8 mW Excellent gate charge x R product (FOM)DS(on)ID 120 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to JE

Isc N-Channel MOSFET Transistor IPB038N12N3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

IPI041N12N3 GIPP041N12N3 G IPB038N12N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 120 VDS N-channel, normal levelR 3.8mDS(on),max (TO-263) Excellent gate charge x R product (FOM)DS(on)I 120 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to

Type IPB034N06L3 G IPI037N06L3 GIPP037N06L3 GProduct SummaryOptiMOS3 Power-TransistorV 60 VDSFeaturesR 3.4mDS(on),max (SMD) Ideal for high frequency switching and sync. rec.I 90 AD Optimized technology for DC/DC convertersprevious engineering Excellent gate charge x R product (FOM)DS(on)sample codes: Very low on-resistance RDS(on)IPP04xN06

pe IPB034N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D P 6?A BH>3 A53C96931C9?> =?C?A 4A9E5B 1>4 43 43 ,&),R 4 m D n) m xP G35

IPB030N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m xQ ( @D9=9J54 D538>?CI 1 DQ H35

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

Type IPB037N06N3 G IPI040N06N3 GIPP040N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDSR 3.7 for sync. rectification, drives and dc/dc SMPS mDS(on),max (SMD)I 90 A Excellent gate charge x R product (FOM) DDS(on)previous engineering Very low on-resistance RDS(on)sample codes: N-channel, normal level IPP04xN06NIPI04xN06N Ava

IPP037N08N3 G IPI037N08N3 GIPB035N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m xQ ( @D9=9J54 D538>?F5BD5BCI 1 DQ H3579>55B9>7 3?45 Q .5BI B5C9CD1>35 +D n)#) ' ' !Q ' 381>>5?B=1

IPB033N10N5LFMOSFETDPAKOptiMOSTM 5 Linear FET, 100 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain

IPB031NE7N3 GTM 3 Power-TransistorProduct SummaryFeaturesV 7 D Q ( @D9=9J54 D538>??EC B53D96931D9?>R 1 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BCI 1 DQ H35

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

IPB039N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1

IPB03N03LBOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Ideal for high-frequency dc/dc convertersR 2.8mDS(on),max Qualified according to JEDEC1) for target applicationI 80 AD N-channel - Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)PG-TO220-3-1PG-TO263-3 Superior thermal resistan

IPB036N12N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D Q #4513I CG9D389>7 1>4 3?>F5BD5BCR m D n) m xQ H35

pe %% # ! % # ! % (>.;?6?@%>EFeatures 4 D S 4EF EI

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VIPB031N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VIPB031N08N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

Type IPP039N04L GIPB039N04L G 3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

IPB032N10N5MOSFETD-PAK 7pinOptiMOS 5 Power-Transistor, 100 VFeatures Ideal for high frequency switching and sync. rec.tab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level1 100% avalanche tested Pb-free plating; RoHS compliant7 Qualified according to JEDEC1) for target applications H

IPP037N08N3 G IPI037N08N3 GIPB035N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS Ideal for high frequency switching and sync. rec.R 3.5mDS(on),max Optimized technology for DC/DC convertersI 100 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested

IPB039N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

Isc N-Channel MOSFET Transistor IPB033N10N5LFFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

Isc N-Channel MOSFET Transistor IPB035N08N3GFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

isc N-Channel MOSFET Transistor IPB034N03LDESCRIPTIONDrain Current :I = 80A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY

Isc N-Channel MOSFET Transistor IPB037N06N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Isc N-Channel MOSFET Transistor IPB034N06L3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

Isc N-Channel MOSFET Transistor IPB031N08N5FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

isc N-Channel MOSFET Transistor IPB039N04LFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

isc N-Channel MOSFET Transistor IPB034N03LDESCRIPTIONDrain Current :I = 80A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB031NE7N3FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXI