APT6015JVR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT6015JVR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 450 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 900 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Encapsulados: SOT227
Búsqueda de reemplazo de APT6015JVR MOSFET
- Selecciónⓘ de transistores por parámetros
APT6015JVR datasheet
apt6015jvr.pdf
APT6015JVR 600V 35A 0.150 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche T
apt6015jvfr.pdf
APT6015JVFR 600V 35A 0.150W FREDFET POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhance- ment mode power MOSFETs. This new technology minimizes the JFET ef- fect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP file # E145592 Faster S
apt6015jn.pdf
D G APT6015JN 600V 38.0A 0.15 S APT6018JN 600V 35.0A 0.18 ISOTOP "UL Recognized" File No. E145592 (S) POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 6015JN 6018JN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Cu
apt6015lvfr.pdf
APT6015LVFR 600V 38A 0.150W POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Teste
Otros transistores... APT50M50JVR, APT50M50PVR, APT50M60JN, APT50M85JVFR, APT50M85JVR, APT6013JVR, APT6015B2VR, APT6015JN, IRFZ24N, APT6015LVR, APT6017WVR, APT6020LVR, APT6025BVR, APT6027HVR, APT6030BN, APT6030BVR, APT6032AVR
History: BF993
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