IPB06CN10NG Todos los transistores

 4.1. Size:519K  infineon
 ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf

IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 6.2 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

 9.1. Size:614K  infineon
 ipb065n03l.pdf

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 9.2. Size:1021K  infineon
 ipp070n08n3 ipp070n08n3 ipi070n08n3 ipb067n08n3.pdf

IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1

 9.3. Size:274K  infineon
 ipb06n03la.pdf

IPB06N03LA G OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 5.9 m DS(on),max Qualified according to JEDEC1) for target applications I 50 A D N-channel - Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) PG-TO263-3-2 Superior thermal res

 9.4. Size:1157K  infineon
 ipb065n10n3g.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 3 Power-Transistor, 100 V IPB065N10N3 G Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 3 Power-Transistor, 100 V IPB065N10N3 G D PAK 1 Description Features N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 175

 9.5. Size:1013K  infineon
 ipp070n08n3g ipi070n08n3g ipb067n08n3g.pdf

IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1

 9.6. Size:637K  infineon
 ipb065n15n3g.pdf

IPB065N15N3 G 3 Power-Transistor Product Summary Features V 150 V DS Q ' 381>>5?B=1

 9.7. Size:1098K  infineon
 ipb060n15n5.pdf

IPB060N15N5 MOSFET D -PAK 7pin OptiMOS 5 Power-Transistor, 150 V Features Features tab Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Q ) rr 1 175 C operating temperature Pb-free lead plating; RoHS compliant 7 Qualified according to JEDEC1) for target application Ideal for high-f

 9.8. Size:738K  infineon
 ipb065n06lg ipp065n06lg.pdf

IPB065N06L G IPP065N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R m , ?> =1G P ( 381>>581>35=5>C

 9.9. Size:258K  inchange semiconductor
 ipb067n08n3.pdf

Isc N-Channel MOSFET Transistor IPB067N08N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 9.10. Size:242K  inchange semiconductor
 ipb065n03l.pdf

isc N-Channel MOSFET Transistor IPB065N03L DESCRIPTION Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(T =25 ) C SY

 9.11. Size:258K  inchange semiconductor
 ipb065n10n3.pdf

Isc N-Channel MOSFET Transistor IPB065N10N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V