IPB097N08N3G Todos los transistores

 ..1. Size:1010K  infineon
 ipp100n08n3g ipi100n08n3g ipb097n08n3g ipp100n08n3 ipi100n08n3 ipb097n08n3.pdf

IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I 7 D Q H35>5?B=1

 3.1. Size:258K  inchange semiconductor
 ipb097n08n3.pdf

Isc N-Channel MOSFET Transistor IPB097N08N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 9.1. Size:443K  infineon
 ipb093n04l.pdf

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 9.2. Size:274K  infineon
 ipb09n03lag.pdf

IPB09N03LA G OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 8.9 m DS(on),max Qualified according to JEDEC1) for target applications I 50 A D N-channel - Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) PG-TO263-3-2 Superior thermal res

 9.3. Size:687K  infineon
 ipb090n06n3g ipp093n06n3g.pdf

pe IPB090N06N3 G IPP093N06N3 G 3 Power-Transistor Product Summary Features V D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&), R m , ?> =1G ,& P G35

 9.4. Size:295K  infineon
 ipb090n06n3 ipp093n06n3.pdf

 9.5. Size:636K  infineon
 ipb096n03lg ipp096n03lg.pdf

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 9.6. Size:311K  infineon
 ipb09n03la ipi09n03la ipp09n03la.pdf

IPB09N03LA IPI09N03LA, IPP09N03LA OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 8.9 m DS(on),max N-channel I 50 A D Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Superior thermal resistance 1

 9.7. Size:687K  infineon
 ipp093n06n3 ipb093n06n3.pdf

pe IPB090N06N3 G IPP093N06N3 G 3 Power-Transistor Product Summary Features V D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&), R m , ?> =1G ,& P G35

 9.8. Size:815K  cn vbsemi
 ipb090n06n3g.pdf

IPB090N06N3G www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-So

 9.9. Size:204K  inchange semiconductor
 ipb090n06n3.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB090N06N3 FEATURES With TO-263(D2PAK) packaging Ultra-fast body diode High speed switching Very low on-resistance Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a