IPB180N04S4-01 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB180N04S4-01

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 188 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 180 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 2450 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm

Encapsulados: TO263-7

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IPB180N04S4-01 datasheet

 ..1. Size:162K  infineon
 ipb180n04s4-01 ipb180n04s4-01 ds 1 0.pdf pdf_icon

IPB180N04S4-01

IPB180N04S4-01 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.3 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-01 PG-TO263-7-3 4N0401

 1.1. Size:351K  infineon
 ipb180n04s4-00.pdf pdf_icon

IPB180N04S4-01

IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 0.98 mW ID 180 A Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N0400 Maxim

 1.2. Size:162K  infineon
 ipb180n04s4-00 ds 1 0.pdf pdf_icon

IPB180N04S4-01

IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 0.98 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N040

 2.1. Size:162K  infineon
 ipb180n04s4-h0 ipb180n04s4-h0 ds 1 0.pdf pdf_icon

IPB180N04S4-01

IPB180N04S4-H0 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.1 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-H0 PG-TO263-7-3 4N04H0

MOSTRAR MÁS

Otros transistores... IPB123N10N3G, IPB12CNE8NG, IPB136N08N3G, IPB144N12N3G, IPB147N03LG, IPB160N04S4-H1, IPB16CN10NG, IPB180N03S4L-01, IRF2807, IPB180N04S4-H0, IPB200N15N3G, IPB200N25N3G, IPB230N06L3G, IPB260N06N3G, IPB26CN10NG, IPB320N20N3G, IPB34CN10NG