IPB200N15N3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB200N15N3G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 214 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de IPB200N15N3G MOSFET
- Selecciónⓘ de transistores por parámetros
IPB200N15N3G datasheet
ipb200n15n3g ipd200n15n3g ipi200n15n3g ipp200n15n3g ipb200n15n3 ipd200n15n3 ipi200n15n3 ipp200n15n3.pdf
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 150 V N-channel, normal level RDS(on),max 20 mW Excellent gate charge x R product (FOM) DS(on) ID 50 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for t
ipb200n15n3g.pdf
Isc N-Channel MOSFET Transistor IPB200N15N3G FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source
ipb200n25n3-g ipp200n25n3-g ipi200n25n3-g ipb200n25n3g ipp200n25n3g ipi200n25n3g.pdf
ipb200n25n3g.pdf
Isc N-Channel MOSFET Transistor IPB200N25N3G FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )
Otros transistores... IPB136N08N3G, IPB144N12N3G, IPB147N03LG, IPB160N04S4-H1, IPB16CN10NG, IPB180N03S4L-01, IPB180N04S4-01, IPB180N04S4-H0, IRFZ24N, IPB200N25N3G, IPB230N06L3G, IPB260N06N3G, IPB26CN10NG, IPB320N20N3G, IPB34CN10NG, IPB45N04S4L-08, IPB50CN10NG
History: BRCS100N06RA
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUP060N055 | AUP056N10 | AUP056N08BGL | AUP052N085 | AUP045N12 | AUP039N10 | AUP034N10 | AUP034N06 | AUP033N08BG | AUP026N085 | AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10
Popular searches
p75nf75 mosfet | ao4407a | mpsa06 datasheet | bc548 pinout | bdw94c | bd140 transistor | 2n2222a datasheet | bd136
