APT6030BN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT6030BN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 360 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 505 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: TO247

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APT6030BN datasheet

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 apt6030bn.pdf pdf_icon

APT6030BN

D TO-247 G APT6030BN 600V 23.0A 0.30 S APT6033BN 600V 22.0A 0.33 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 6030BN 6033BN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Current @ TC = 25 C 23 22 Amps IDM Pulsed Drain Current 1 92 88 V

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 apt6030bvr.pdf pdf_icon

APT6030BN

APT6030BVR 600V 21A 0.300 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

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 apt6030bvfr.pdf pdf_icon

APT6030BN

APT6030BVFR 600V 21A 0.300W POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tested

 6.3. Size:376K  inchange semiconductor
 apt6030bvr.pdf pdf_icon

APT6030BN

isc N-Channel MOSFET Transistor APT6030BVR FEATURES Drain Current I =21A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

MOSTRAR MÁS

Otros transistores... APT6015B2VR, APT6015JN, APT6015JVR, APT6015LVR, APT6017WVR, APT6020LVR, APT6025BVR, APT6027HVR, IRFB31N20D, APT6030BVR, APT6032AVR, APT6035AVR, APT6035BN, APT6035BVR, APT6035SVR, APT6037HVR, APT6040BN