IPB60R600CP Todos los transistores

 ..1. Size:273K  infineon
 ipb60r600cp.pdf

IPB60R600CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Lowest figure-of-merit RON x Qg R @ Tj =25 C 0.6 DS(on),max Ultra low gate charge Q 21 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO263 Pb-free lead plating; RoHS compliant CoolMOS CP is desi

 ..2. Size:257K  inchange semiconductor
 ipb60r600cp.pdf

Isc N-Channel MOSFET Transistor IPB60R600CP FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 4.1. Size:1224K  infineon
 ipd60r600c6 ipb60r600c6 ipp60r600c6 ipa60r600c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.5 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the super

 4.2. Size:1051K  infineon
 ipb60r600c6.pdf

MOSFET + =L9D - PA

 4.3. Size:257K  inchange semiconductor
 ipb60r600c6.pdf

Isc N-Channel MOSFET Transistor IPB60R600C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V