IPB65R280C6 Todos los transistores

 ..1. Size:1337K  infineon
 ipa65r280c6 ipb65r280c6 ipi65r280c6 ipp65r280c6 ipw65r280c6.pdf

MO Met l Oxi e emi n t iel e t n i t C lMO C6 65 C lMO C6 e n i t I x65 280C6 D t eet Rev. 2.1 in l e M n ement & M ltim ket , == $&)G '=D3? *?/

 ..2. Size:2104K  infineon
 ipb65r280c6.pdf

MOSFET +

 ..3. Size:258K  inchange semiconductor
 ipb65r280c6.pdf

Isc N-Channel MOSFET Transistor IPB65R280C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 5.1. Size:2033K  infineon
 ipb65r280e6 ipi65r280e6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final Industrial & Multimarket 650V CoolMOS E6 Power Transistor IPA65R280E6, IPB65R280E6 IPI65R280E6, IPP65R280E6 IPW65R280E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 5.2. Size:258K  inchange semiconductor
 ipb65r280e6.pdf

Isc N-Channel MOSFET Transistor IPB65R280E6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 7.1. Size:1580K  infineon
 ipb65r225c7.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPB65R225C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPB65R225C7 D PAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and tab

 7.2. Size:270K  inchange semiconductor
 ipb65r225c7.pdf

isc N-Channel MOSFET Transistor IPB65R225C7 FEATURES Static drain-source on-resistance RDS(on) 0.225 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate char