IPD100N04S4-02 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD100N04S4-02

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 1630 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm

Encapsulados: TO252

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IPD100N04S4-02 datasheet

 ..1. Size:154K  infineon
 ipd100n04s4-02.pdf pdf_icon

IPD100N04S4-02

IPD100N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 2.0 m DS(on),max I 100 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD100N04S4-02 PG-TO252-3-313 4N0402 Maximum ratin

 ..2. Size:291K  inchange semiconductor
 ipd100n04s4-02.pdf pdf_icon

IPD100N04S4-02

isc N-Channel MOSFET Transistor IPD100N04S4-02 FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R 4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAX

 3.1. Size:232K  infineon
 ipd100n04s4l-02.pdf pdf_icon

IPD100N04S4-02

IPD100N04S4L-02 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on),max 1.9 mW ID 100 A Features OptiMOSTM - power MOSFET for automotive applications PG-TO252-3-313 N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Typ

 6.1. Size:163K  infineon
 ipd100n06s4-03.pdf pdf_icon

IPD100N04S4-02

IPD100N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.5 m DS(on),max I 100 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSon Ultra High ID Type Package Marking IPD100N

MOSTRAR MÁS

Otros transistores... IPB65R280C6, IPB65R280E6, IPB65R380C6, IPB65R600C6, IPB65R660CFD, IPB70N04S4-06, IPB79CN10NG, IPB80N04S4-03, AO3400, IPD100N06S4-03, IPD14N06S2-80, IPD15N06S2L-64, IPD22N08S2L-50, IPD25N06S2-40, IPD25N06S4L-30, IPD26N06S2L-35, IPD30N03S2L-07