IPD25N06S4L-30 Todos los transistores

 ..1. Size:167K  infineon
 ipd25n06s4l-30.pdf

IPD25N06S4L-30 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 30 m DS(on),max I 25 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD25N06S4L-30 PG-TO252-3-11 4N06L30 Maximum rat

 5.1. Size:148K  infineon
 ipd25n06s2-40.pdf

IPD25N06S2-40 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 40 m DS(on),max Automotive AEC Q101 qualified I 29 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD25N06S2

 9.1. Size:618K  infineon
 ipd250n06n3.pdf

pe # ! ! # A03 B53 R m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1

 9.2. Size:912K  infineon
 ipd25dp06lm.pdf

IPD25DP06LM MOSFET D-PAK OptiMOSTM Power Transistor, -60 V Features tab P-Channel Very low on-resistance R @ V =4.5 V DS(on) GS 100% avalanche tested Logic Level Enhancement mode 1 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applications Drain ta

 9.3. Size:1032K  infineon
 ipb26cn10ng ipd25cn10ng ipi26cn10ng ipp26cn10ng.pdf

IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 25 mW Excellent gate charge x R product (FOM) DS(on) ID 35 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

 9.4. Size:707K  infineon
 ipb26cn10n-g ipd25cn10n-g ipi26cn10n-g ipp26cn10n-g ipu25cn10n-g.pdf

IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 25 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 35 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

 9.5. Size:910K  infineon
 ipd25dp06nm.pdf

IPD25DP06NM MOSFET D-PAK OptiMOSTM Power Transistor, -60 V Features tab P-Channel Very low on-resistance R DS(on) 100% avalanche tested Normal Level Enhancement mode 1 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applications Drain tab Table 1 Ke

 9.6. Size:242K  inchange semiconductor
 ipd25cn10n.pdf

isc N-Channel MOSFET Transistor IPD25CN10N,IIPD25CN10N FEATURES Static drain-source on-resistance RDS(on) 25m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER