IPD30N03S4L-09 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPD30N03S4L-09
   Código: 4N03L09
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 15 nC
   trⓘ - Tiempo de subida: 1 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO252

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IPD30N03S4L-09 Datasheet (PDF)

..1. Size:173K infineon
ipd30n03s4l-09.pdf

IPD30N03S4L-09OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 9.0mWDS(on),maxI 30 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD30N03S4L-09 PG-TO252-3-11 4N03L09M

2.1. Size:184K infineon
ipd30n03s4l-14 ipd30n03s4l-14 ds.pdf

IPD30N03S4L-14OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 13.6mDS(on),maxI 30 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD30N03S4L-1

5.1. Size:151K infineon
ipd30n03s2l-07.pdf

IPD30N03S2L-07OptiMOS Power-TransistorProduct SummaryFeaturesV 30 VDS N-channel Logic Level - Enhancement modeR 6.7mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD30N03S2

5.2. Size:152K infineon
ipd30n03s2l-20.pdf

IPD30N03S2L-20OptiMOS Power-TransistorProduct SummaryFeaturesV 30 VDS N-channel Logic Level - Enhancement modeR 20mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD30N03S2L

5.3. Size:151K infineon
ipd30n03s2l-10.pdf

IPD30N03S2L-10OptiMOS Power-TransistorProduct SummaryFeaturesV 30 VDS N-channel Logic Level - Enhancement modeR 10mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD30N03S2L

5.4. Size:1828K cn vbsemi
ipd30n03s2l-10.pdf

IPD30N03S2L-10www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFET

5.5. Size:207K inchange semiconductor
ipd30n03s2l.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPD30N03S2LFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T

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