IPD30N03S4L-09 Todos los transistores

 ..1. Size:173K  infineon
 ipd30n03s4l-09.pdf

IPD30N03S4L-09 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 9.0 mW DS(on),max I 30 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD30N03S4L-09 PG-TO252-3-11 4N03L09 M

 2.1. Size:184K  infineon
 ipd30n03s4l-14 ipd30n03s4l-14 ds.pdf

IPD30N03S4L-14 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 13.6 m DS(on),max I 30 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N03S4L-1

 5.1. Size:151K  infineon
 ipd30n03s2l-07.pdf

IPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Features V 30 V DS N-channel Logic Level - Enhancement mode R 6.7 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N03S2

 5.2. Size:152K  infineon
 ipd30n03s2l-20.pdf

IPD30N03S2L-20 OptiMOS Power-Transistor Product Summary Features V 30 V DS N-channel Logic Level - Enhancement mode R 20 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N03S2L

 5.3. Size:151K  infineon
 ipd30n03s2l-10.pdf

IPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Features V 30 V DS N-channel Logic Level - Enhancement mode R 10 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N03S2L

 5.4. Size:1828K  cn vbsemi
 ipd30n03s2l-10.pdf

IPD30N03S2L-10 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET

 5.5. Size:207K  inchange semiconductor
 ipd30n03s2l.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPD30N03S2L FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T