APT6035BVR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT6035BVR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 280 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 403 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
Encapsulados: TO247
Búsqueda de reemplazo de APT6035BVR MOSFET
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APT6035BVR datasheet
apt6035bvr.pdf
APT6035BVR 600V 18A 0.350 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
apt6035bvr.pdf
isc N-Channel MOSFET Transistor APT6035BVR FEATURES Drain Current I =18A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.35 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
apt6035bvfrg apt6035svfrg.pdf
APT6035BVFR APT6035SVFR 600V 18A 0.350 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVFR
apt6035bvfr.pdf
APT6035BVFR APT6035SVFR 600V 18A 0.350 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVFR
Otros transistores... APT6020LVR, APT6025BVR, APT6027HVR, APT6030BN, APT6030BVR, APT6032AVR, APT6035AVR, APT6035BN, IRFZ46N, APT6035SVR, APT6037HVR, APT6040BN, APT6045BVR, APT6045CVR, APT6045SVR, APT60M75JVR, APT60M75PVR
History: CTD04N7P5 | CTP06N7P5 | PP4B10BF
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