IPD50N03S2L-06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPD50N03S2L-06OptiMOS Power-TransistorProduct SummaryFeaturesV 30 VDS N-channel Logic Level - Enhancement modeR 6.4mDS(on),max Automotive AEC Q101 qualifiedI 50 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD50N03S2

IPD50N03S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 30 VDS N-channel - Enhancement modeR 7.3mDS(on),max Automotive AEC Q101 qualifiedI 50 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD50N03S2-07 PG-TO252-

IPD50N03S4L-06OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 5.5mWDS(on),maxI 50 ADPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N03S4L-06 PG-TO252-3-11 4N03L06Maximum rat

IPD50N06S2L-13OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 12.7mDS(on),max Automotive AEC Q101 qualifiedI 50 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package Mark

IPD50N08S4-13OptiMOS-T2 Power-TransistorProduct SummaryVDS 80 VRDS(on),max 13.2mWID 50 AFeaturesPG-TO252-3-313 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N08S4-13 PG-TO252-3-313 4N0813Maximum ratings,

IPD50N06S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 7.8mDS(on),maxI 50 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N06S4L-08 PG-TO252-3-11 4N06L08Maximum ra

IPD50N04S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 7.3mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S4-08 PG-TO252-3-313 4N04L08Maximum rating

IPD50N04S4-10OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 9.3mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S4-10 PG-TO252-3-313 4N0410Maximum ratings,

IPD50N06S2L-13OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 12.7mDS(on),max Automotive AEC Q101 qualifiedI 50 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package Mark

IPD50N04S4-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 7.9mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S4-08 PG-TO252-3-313 4N0408Maximum ratings,

IPD50N04S3-08OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 7.5mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S3-08 PG-TO252-3-11 3N0408Max

IPD50N06S2-14 Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 14.4mDS(on),max Automotive AEC Q101 qualifiedI 50 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD50N06S2-14

IPD50N06S4-09OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 9.0mDS(on),maxI 50 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N06S4-09 PG-TO252-3-11 4N0609Maximum ratings, a

IPD50N04S3-09OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 9mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S3-09 PG-TO252-3-11 3N0409Maxim

IPD50N06S4L-12OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 12mDS(on),maxI 50 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N06S4L-12 PG-TO252-3-11 4N06L12Maximum rat

IPD50N06S2-14www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Li