IPD50N10S3L-16 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD50N10S3L-16

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 730 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: TO252

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IPD50N10S3L-16 datasheet

 ..1. Size:296K  infineon
 ipd50n10s3l-16.pdf pdf_icon

IPD50N10S3L-16

IPD50N10S3L-16 OptiMOS -T Power-Transistor Product Summary VDS 100 V RDS(on),max 15 mW ID 50 A Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N10S3L-16 PG-TO252-3-11 QN10L16 Maximum

 ..2. Size:177K  infineon
 ipd50n10s3l-16 ds 1 2.pdf pdf_icon

IPD50N10S3L-16

IPD50N10S3L-16 OptiMOS -T Power-Transistor Product Summary V 100 V DS R 15 mW DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N10S3L-16 PG-TO252-3-11 QN10L16 Ma

 7.1. Size:393K  infineon
 ipd50n12s3l-15.pdf pdf_icon

IPD50N10S3L-16

IPD50N12S3L-15 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max 15 mW ID 50 A Features OptiMOS - power MOSFET for automotive applications PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Typ

 8.1. Size:154K  1
 ipd50n06s2l-13.pdf pdf_icon

IPD50N10S3L-16

IPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 12.7 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Mark

MOSTRAR MÁS

Otros transistores... IPD50N04S3-08, IPD50N04S3-09, IPD50N06S2-14, IPD50N06S2L-13, IPF105N03LG, IPD50N06S4-09, IPD50N06S4L-08, IPD50N06S4L-12, IRF530, IPD50P03P4L-11, IPD70N03S4L-04, IPD70N04S3-07, IPD70N10S3-12, IPD70N10S3L-12, IPD80N04S3-06, IPD80P03P4L-07, IPD90N03S4L-02