IPD50P03P4L-11 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD50P03P4L-11
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 58 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua
de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 3 nS
Cossⓘ - Capacitancia de salida: 835 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de IPD50P03P4L-11 MOSFET
- Selecciónⓘ de transistores por parámetros
IPD50P03P4L-11 datasheet
..1. Size:159K infineon
ipd50p03p4l-11 ipd50p03p4l-11 ds 11.pdf 
IPD50P03P4L-11 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R 10.5 m DS(on),max I -50 A D Features PG-TO252-3-11 P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Intended for reverse battery protection Type Package
7.1. Size:114K infineon
ipd50p04p4l-11-datasheet-infineon-v10 ipd50p04p4l-11.pdf
IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R 10.6 mW DS(on),max I -50 A D Features PG-TO252-3-313 P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Intended for reverse battery protection Type Package M
7.2. Size:413K infineon
ipd50p04p4-13.pdf
Type IPD50P04P4-13 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) 12.6 mW ID -50 A Features P-channel - Normal Level - Enhancement mode AEC qualified PG-TO252-3-313 MSL1 up to 260 C peak reflow Tab 175 C operating temperature Green package (RoHS compliant) 1 3 100% Avalanche tested Source pin 3 Gate pin 1 Type Package Marking Drai
9.1. Size:154K 1
ipd50n06s2l-13.pdf
IPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 12.7 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Mark
9.2. Size:1624K 1
ipd50r1k4ce ipu50r1k4ce 50s1k4ce.pdf
IPD50R1K4CE, IPU50R1K4CE MOSFET DPAK IPAK 500V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 1 2 3 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer an
9.3. Size:268K infineon
ipd50n08s4-13.pdf
IPD50N08S4-13 OptiMOS -T2 Power-Transistor Product Summary VDS 80 V RDS(on),max 13.2 mW ID 50 A Features PG-TO252-3-313 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N08S4-13 PG-TO252-3-313 4N0813 Maximum ratings,
9.4. Size:162K infineon
ipd50n06s4l-08 ipd50n06s4l-08 ds 10.pdf
IPD50N06S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 7.8 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4L-08 PG-TO252-3-11 4N06L08 Maximum ra
9.5. Size:296K infineon
ipd50n10s3l-16.pdf
IPD50N10S3L-16 OptiMOS -T Power-Transistor Product Summary VDS 100 V RDS(on),max 15 mW ID 50 A Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N10S3L-16 PG-TO252-3-11 QN10L16 Maximum
9.6. Size:150K infineon
ipd50n03s2-07.pdf
IPD50N03S2-07 OptiMOS Power-Transistor Product Summary Features V 30 V DS N-channel - Enhancement mode R 7.3 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD50N03S2-07 PG-TO252-
9.7. Size:2508K infineon
ipd50r2k0ce ipu50r2k0ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R2K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R2K0CE, IPU50R2K0CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio
9.8. Size:151K infineon
ipd50n03s2l-06.pdf
IPD50N03S2L-06 OptiMOS Power-Transistor Product Summary Features V 30 V DS N-channel Logic Level - Enhancement mode R 6.4 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD50N03S2
9.9. Size:1840K infineon
ipd50r380ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPD50R380CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R380CE DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and p
9.10. Size:1057K infineon
ipd50r650ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPD50R650CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPD50R650CE DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by
9.11. Size:153K infineon
ipd50n04s4l-08 ipd50n04s4l-08 ds 1 0.pdf
IPD50N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 7.3 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N04L08 Maximum rating
9.12. Size:1046K infineon
ipd50r500ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPD50R500CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPD50R500CE DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by
9.13. Size:153K infineon
ipd50n04s4-10 ipd50n04s4-10 ds 1 0.pdf
IPD50N04S4-10 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 9.3 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S4-10 PG-TO252-3-313 4N0410 Maximum ratings,
9.14. Size:148K infineon
ipd50n06s2l-13.pdf
IPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 12.7 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Mark
9.15. Size:2499K infineon
ipd50r950ce ipu50r950ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R950CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R950CE, IPU50R950CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio
9.16. Size:751K infineon
ipd50r399cp.pdf
IPD50R399CP CoolMOSTM Power Transistor Product Summary Product Summary Features V"1 @Tjmax 550 V V"1 @Tjmax 550 V V *EL;HI
9.17. Size:154K infineon
ipd50n04s4-08 ds 1 0.pdf
IPD50N04S4-08 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 7.9 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N0408 Maximum ratings,
9.19. Size:615K infineon
ipd50r520cp.pdf
Type IPD50R520CP CoolMOSTM Power Transistor Product Summary Product Summary Package V"1 @Tjmax 550 V V"1 @Tjmax 550 V V *EL;HI
9.20. Size:393K infineon
ipd50n12s3l-15.pdf
IPD50N12S3L-15 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max 15 mW ID 50 A Features OptiMOS - power MOSFET for automotive applications PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Typ
9.21. Size:177K infineon
ipd50n10s3l-16 ds 1 2.pdf
IPD50N10S3L-16 OptiMOS -T Power-Transistor Product Summary V 100 V DS R 15 mW DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N10S3L-16 PG-TO252-3-11 QN10L16 Ma
9.22. Size:184K infineon
ipd50n04s3-08 ipd50n04s3-08 ds 1 0.pdf
IPD50N04S3-08 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 7.5 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S3-08 PG-TO252-3-11 3N0408 Max
9.23. Size:149K infineon
ipd50n06s2-14 ipd50n06s2-14 ds 1 1.pdf
IPD50N06S2-14 Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 14.4 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD50N06S2-14
9.24. Size:2513K infineon
ipd50r3k0ce ipu50r3k0ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R3K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R3K0CE, IPU50R3K0CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio
9.25. Size:1057K infineon
ipd50r800ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPD50R800CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPD50R800CE DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by
9.26. Size:132K infineon
ipd50n03s4l-06 ipd50n03s4l-06 ds 1 1.pdf
IPD50N03S4L-06 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 5.5 mW DS(on),max I 50 A D PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N03S4L-06 PG-TO252-3-11 4N03L06 Maximum rat
9.27. Size:1044K infineon
ipd50r280ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPD50R280CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPD50R280CE DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by
9.28. Size:164K infineon
ipd50n06s4-09 ipd50n06s4-09 ds 12.pdf
IPD50N06S4-09 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 9.0 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4-09 PG-TO252-3-11 4N0609 Maximum ratings, a
9.29. Size:182K infineon
ipd50n04s3-09 ipd50n04s3-09 ds 1 1.pdf
IPD50N04S3-09 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 9 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S3-09 PG-TO252-3-11 3N0409 Maxim
9.30. Size:2492K infineon
ipd50r1k4ce ipu50r1k4ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R1K4CE Data Sheet Rev. 2.2 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R1K4CE, IPU50R1K4CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio
9.31. Size:163K infineon
ipd50n06s4l-12 ipd50n06s4l-12 ds 10.pdf
IPD50N06S4L-12 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 12 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4L-12 PG-TO252-3-11 4N06L12 Maximum rat
9.32. Size:824K cn vbsemi
ipd50n06s2-14.pdf
IPD50N06S2-14 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Li
9.33. Size:242K inchange semiconductor
ipd50r380ce.pdf
isc N-Channel MOSFET Transistor IPD50R380CE,IIPD50R380CE FEATURES Static drain-source on-resistance RDS(on) 380m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS
9.34. Size:242K inchange semiconductor
ipd50r650ce.pdf
isc N-Channel MOSFET Transistor IPD50R650CE,IIPD50R650CE FEATURES Static drain-source on-resistance RDS(on) 650m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS
9.35. Size:241K inchange semiconductor
ipd50r500ce.pdf
isc N-Channel MOSFET Transistor IPD50R500CE,IIPD50R500CE FEATURES Static drain-source on-resistance RDS(on) 500m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS
9.36. Size:241K inchange semiconductor
ipd50r2k0ce.pdf
isc N-Channel MOSFET Transistor IPD50R2K0CE,IIPD50R2K0CE FEATURES Static drain-source on-resistance RDS(on) 2 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V G
9.37. Size:242K inchange semiconductor
ipd50r399cp.pdf
isc N-Channel MOSFET Transistor IPD50R399CP,IIPD50R399CP FEATURES Static drain-source on-resistance RDS(on) 399m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS
9.38. Size:242K inchange semiconductor
ipd50r1k4ce.pdf
isc N-Channel MOSFET Transistor IPD50R1K4CE,IIPD50R1K4CE FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V
9.39. Size:241K inchange semiconductor
ipd50r520cp.pdf
isc N-Channel MOSFET Transistor IPD50R520CP, IIPD50R520CP FEATURES Static drain-source on-resistance RDS(on) 520m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS
9.40. Size:242K inchange semiconductor
ipd50r950ce.pdf
isc N-Channel MOSFET Transistor IPD50R950CE,IIPD50R950CE FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
9.41. Size:241K inchange semiconductor
ipd50r3k0ce.pdf
isc N-Channel MOSFET Transistor IPD50R3K0CE,IIPD50R3K0CE FEATURES Static drain-source on-resistance RDS(on) 3 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V G
9.42. Size:242K inchange semiconductor
ipd50r800ce.pdf
isc N-Channel MOSFET Transistor IPD50R800CE,IIPD50R800CE FEATURES Static drain-source on-resistance RDS(on) 800m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS
9.43. Size:242K inchange semiconductor
ipd50r280ce.pdf
isc N-Channel MOSFET Transistor IPD50R280CE,IIPD50R280CE FEATURES Static drain-source on-resistance RDS(on) 280m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS
Otros transistores... IPD50N04S3-09, IPD50N06S2-14, IPD50N06S2L-13, IPF105N03LG, IPD50N06S4-09, IPD50N06S4L-08, IPD50N06S4L-12, IPD50N10S3L-16, CS150N03A8, IPD70N03S4L-04, IPD70N04S3-07, IPD70N10S3-12, IPD70N10S3L-12, IPD80N04S3-06, IPD80P03P4L-07, IPD90N03S4L-02, IPD90N03S4L-03
