IPD80P03P4L-07 Todos los transistores

 

IPD80P03P4L-07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD80P03P4L-07
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 88 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 1220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0068 Ohm
   Paquete / Cubierta: TO252
 

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IPD80P03P4L-07 Datasheet (PDF)

 ..1. Size:165K  infineon
ipd80p03p4l-07 ds 10.pdf pdf_icon

IPD80P03P4L-07

IPD80P03P4L-07OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR 6.8mDS(on)I -80 ADFeatures P-channel - Logic Level - Enhancement modePG-TO252-3-11 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Intended for reverse battery protection Type Package Mar

 ..2. Size:309K  inchange semiconductor
ipd80p03p4l-07.pdf pdf_icon

IPD80P03P4L-07

isc P-Channel MOSFET Transistor IPD80P03P4L-07FEATURESDrain Current I = -80A@ T =25D CDrain Source Voltage: V = -30V(Min)DSSStatic Drain-Source On-Resistance: R = 6.8m(Max) @V = -10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

 9.1. Size:948K  infineon
ipd80r750p7.pdf pdf_icon

IPD80P03P4L-07

IPD80R750P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

 9.2. Size:2292K  infineon
ipd80r1k4ce ipu80r1k4ce.pdf pdf_icon

IPD80P03P4L-07

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R1K4CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R1K4CE, IPU80R1K4CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine

Otros transistores... IPD50N06S4L-12 , IPD50N10S3L-16 , IPD50P03P4L-11 , IPD70N03S4L-04 , IPD70N04S3-07 , IPD70N10S3-12 , IPD70N10S3L-12 , IPD80N04S3-06 , P60NF06 , IPD90N03S4L-02 , IPD90N03S4L-03 , IPD90N04S3-04 , IPD90N04S3-H4 , IPD90N04S4-04 , IPD90N04S4L-04 , IPD90N06S4-04 , IPD90N06S4-05 .

History: BUK9Y1R3-40H | SI8469DB

 

 
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