IPD90N06S4L-05 Todos los transistores

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IPD90N06S4L-05 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD90N06S4L-05

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 107 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 90 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.0046 Ohm

Empaquetado / Estuche: PGTO252

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IPD90N06S4L-05 Datasheet (PDF)

1.1. ipd90n06s4-05 ds 10.pdf Size:163K _infineon

IPD90N06S4L-05
IPD90N06S4L-05

IPD90N06S4-05 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R 5.1 m? DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSon Type Package Marking IPD90N04S6-05 PG-TO252-3-11 4N0605 Maximum rating

1.2. ipd90n06s4-07 ds 10.pdf Size:163K _infineon

IPD90N06S4L-05
IPD90N06S4L-05

IPD90N06S4-07 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R 6.9 m? DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSon Type Package Marking IPD90N04S6-07 PG-TO252-3-11 4N0607 Maximum rating

1.3. ipd90n06s4-04 ds 12.pdf Size:163K _infineon

IPD90N06S4L-05
IPD90N06S4L-05

IPD90N06S4-04 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R 3.8 m? DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N06S4-04 PG-TO252-3-11 4N0604 Maximum ratings, at T =25 C, unless o

1.4. ipd90n06s4l-03 ds 10.pdf Size:163K _infineon

IPD90N06S4L-05
IPD90N06S4L-05

IPD90N06S4L-03 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R 3.5 m? DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-03 PG-TO252-3-11 4N06L03

1.5. ipd90n06s4l-06 ds 10.pdf Size:163K _infineon

IPD90N06S4L-05
IPD90N06S4L-05

IPD90N06S4L-06 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R 6.3 m? DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-06 PG-TO252-3-11 4N06L06

1.6. ipd90n06s4l-05 ds 10.pdf Size:163K _infineon

IPD90N06S4L-05
IPD90N06S4L-05

IPD90N06S4L-05 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R 4.6 m? DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-05 PG-TO252-3-11 4N06L05 Maximum rat

Otros transistores... IPD90N04S3-04 , IPD90N04S3-H4 , IPD90N04S4-04 , IPD90N04S4L-04 , IPD90N06S4-04 , IPD90N06S4-05 , IPD90N06S4-07 , IPD90N06S4L-03 , 2SK2545 , IPD90N06S4L-06 , IPD90P03P4-04 , IPD90P03P4L-04 , IPD031N03LG , IPD031N06L3G , IPD034N06N3G , IPD035N06L3G , IPD036N04LG .

 


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