IPD048N06L3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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isc N-Channel MOSFET Transistor IPD048N06L3IIPD048N06L3FEATURESStatic drain-source on-resistance:RDS(on)4.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

IPD046N08N5MOSFETD-PAKOptiMOSTM5 Power-Transistor, 80 VFeaturestab N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant1 Qualified according to JEDEC1) for target application3 Ideal for high-frequency switching and synchronous re

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IPD04N03LB G IPS04N03LB GIPU04N03LB G IPF04N03LB GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Ideal for high-frequency dc/dc convertersR 4.1mDS(on),max Qualified according to JEDEC1) for target applicationsI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C operat

IPD042P03L3 GOptiMOSTM P3 Power-TransistorProduct Summary FeaturesVDS -30 V single P-Channel (Logic Level)VGS = 10V RDS(on),max 4.2 mW Enhancement modeVGS = 4.5V 6.8 Qualified according JEDEC1) for target applicationsID -70 A 175 C operating temperature Pb-free; RoHS compliant applications: load switch, HS-switchPG-TO252-3 D Haloge

isc N-Channel MOSFET Transistor IPD046N08N5,IIPD046N08N5FEATURESStatic drain-source on-resistance:RDS(on)4.6mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 80 VDSSV