APT60M75PVR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT60M75PVR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 625 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 60.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 2000 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Paquete / Cubierta: PPACK
Búsqueda de reemplazo de APT60M75PVR MOSFET
Principales características: APT60M75PVR
apt60m75pvr.pdf
APT60M75PVR 600V 60.5A 0.075 POWER MOS V P-Pack Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low
apt60m75l2llg.pdf
APT60M75L2LL 600V 73A 0.075 R POWER MOS 7 MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fa
apt60m75l2ll.pdf
APT60M75L2LL 600V 73A 0.075W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent
apt60m75l2fllg.pdf
APT60M75L2FLL 600V 73A 0.075 R POWER MOS 7 FREDFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally
Otros transistores... APT6035BVR , APT6035SVR , APT6037HVR , APT6040BN , APT6045BVR , APT6045CVR , APT6045SVR , APT60M75JVR , RU7088R , APT60M90JN , APT8015JVFR , APT8015JVR , APT8018JN , APT8028JVR , APT802R4KN , APT8030B2VFR , APT8030B2VR .
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