APT60M75PVR Todos los transistores

 

APT60M75PVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT60M75PVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 625 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 60.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 20 nS

Conductancia de drenaje-sustrato (Cd): 2000 pF

Resistencia drenaje-fuente RDS(on): 0.075 Ohm

Empaquetado / Estuche: PPACK

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APT60M75PVR Datasheet (PDF)

1.1. apt60m75pvr.pdf Size:36K _apt

APT60M75PVR
APT60M75PVR

APT60M75PVR 600V 60.5A 0.075Ω POWER MOS V® P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

2.1. apt60m75l2llg.pdf Size:162K _update_mosfet

APT60M75PVR
APT60M75PVR

APT60M75L2LL Ω 600V 73A 0.075Ω Ω Ω Ω R POWER MOS 7 MOSFET TO-264 Max Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fa

2.2. apt60m75jvfr.pdf Size:196K _update_mosfet

APT60M75PVR
APT60M75PVR

APT60M75JVFR Ω 600V 62A 0.075Ω Ω Ω Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP® • Faster

 2.3. apt60m75l2fllg.pdf Size:153K _update_mosfet

APT60M75PVR
APT60M75PVR

APT60M75L2FLL Ω 600V 73A 0.075Ω Ω Ω Ω R POWER MOS 7 FREDFET TO-264 Power MOS 7® is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

2.4. apt60m75jvr.pdf Size:73K _apt

APT60M75PVR
APT60M75PVR

APT60M75JVR 600V 62A 0.075Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® D • Faster Switching • 100% Avalanc

 2.5. apt60m75jll.pdf Size:69K _apt

APT60M75PVR
APT60M75PVR

APT60M75JLL 600V 58A 0.075W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "

2.6. apt60m75l2ll.pdf Size:64K _apt

APT60M75PVR
APT60M75PVR

APT60M75L2LL 600V 73A 0.075W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent

2.7. apt60m75.pdf Size:73K _apt

APT60M75PVR
APT60M75PVR

APT60M75JVR 600V 62A 0.075Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® D • Faster Switching • 100% Avalanc

2.8. apt60m75l2fll.pdf Size:65K _apt

APT60M75PVR
APT60M75PVR

APT60M75L2FLL 600V 73A 0.075W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds

2.9. apt60m75jfll.pdf Size:71K _apt

APT60M75PVR
APT60M75PVR

APT60M75JFLL 600V 58A 0.075W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

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