APT60M90JN Todos los transistores

 

APT60M90JN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT60M90JN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 690 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 57 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 24 nS

Conductancia de drenaje-sustrato (Cd): 1810 pF

Resistencia drenaje-fuente RDS(on): 0.09 Ohm

Empaquetado / Estuche: SOT227

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APT60M90JN Datasheet (PDF)

1.1. apt60m90jn.pdf Size:60K _apt

APT60M90JN
APT60M90JN

D G APT60M90JN 600V 57A 0.090Ω S "UL Recognized" File No. E145592 (S) ISOTOP® SINGLE DIE ISOTOP® PACKAGE POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT Symbol Parameter 60M90JN UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25°C 57 Amps IDM, lLM Pulse

4.1. apt60m75l2llg.pdf Size:162K _update_mosfet

APT60M90JN
APT60M90JN

APT60M75L2LL Ω 600V 73A 0.075Ω Ω Ω Ω R POWER MOS 7 MOSFET TO-264 Max Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fa

4.2. apt60m80l2vfrg.pdf Size:160K _update_mosfet

APT60M90JN
APT60M90JN

APT60M80L2VFR Ω 600V 65A 0.080Ω Ω Ω Ω POWER MOS V® FREDFET L2VFR TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX P

 4.3. apt60m80l2vrg.pdf Size:160K _update_mosfet

APT60M90JN
APT60M90JN

APT60M80L2VR Ω 600V 65A 0.080Ω Ω Ω Ω POWER MOS V® MOSFET L2VR TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Pack

4.4. apt60m75jvfr.pdf Size:196K _update_mosfet

APT60M90JN
APT60M90JN

APT60M75JVFR Ω 600V 62A 0.075Ω Ω Ω Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP® • Faster

 4.5. apt60m75l2fllg.pdf Size:153K _update_mosfet

APT60M90JN
APT60M90JN

APT60M75L2FLL Ω 600V 73A 0.075Ω Ω Ω Ω R POWER MOS 7 FREDFET TO-264 Power MOS 7® is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

4.6. apt60m75jvr.pdf Size:73K _apt

APT60M90JN
APT60M90JN

APT60M75JVR 600V 62A 0.075Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® D • Faster Switching • 100% Avalanc

4.7. apt60m80l2vr.pdf Size:77K _apt

APT60M90JN
APT60M90JN

APT60M80L2VR 600V 65A 0.080W POWER MOS V® TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • 100% Avalanche Tested D

4.8. apt60m75jll.pdf Size:69K _apt

APT60M90JN
APT60M90JN

APT60M75JLL 600V 58A 0.075W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "

4.9. apt60m75l2ll.pdf Size:64K _apt

APT60M90JN
APT60M90JN

APT60M75L2LL 600V 73A 0.075W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent

4.10. apt60m75pvr.pdf Size:36K _apt

APT60M90JN
APT60M90JN

APT60M75PVR 600V 60.5A 0.075Ω POWER MOS V® P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

4.11. apt60m60jll.pdf Size:69K _apt

APT60M90JN
APT60M90JN

APT60M60JLL 600V 70A 0.060W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "

4.12. apt60m75.pdf Size:73K _apt

APT60M90JN
APT60M90JN

APT60M75JVR 600V 62A 0.075Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® D • Faster Switching • 100% Avalanc

4.13. apt60m60jfll.pdf Size:70K _apt

APT60M90JN
APT60M90JN

APT60M60JFLL 600V 70A 0.060W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

4.14. apt60m75l2fll.pdf Size:65K _apt

APT60M90JN
APT60M90JN

APT60M75L2FLL 600V 73A 0.075W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds

4.15. apt60m75jfll.pdf Size:71K _apt

APT60M90JN
APT60M90JN

APT60M75JFLL 600V 58A 0.075W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

4.16. apt60m80jvr.pdf Size:69K _apt

APT60M90JN
APT60M90JN

APT60M80JVR Ω 600V 55A 0.080Ω Ω Ω Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Popular SOT-227

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