IPD60R750E6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD60R750E6
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 27 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de IPD60R750E6 MOSFET
- Selecciónⓘ de transistores por parámetros
IPD60R750E6 datasheet
ipd60r750e6.pdf
isc N-Channel MOSFET Transistor IPD60R750E6,IIPD60R750E6 FEATURES Static drain-source on-resistance RDS(on) 0.75 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag
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ipd60r650ce ipa60r650ce.pdf
IPD60R650CE, IPA60R650CE MOSFET DPAK PG-TO 220 FP 600V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Ligh
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ipd60r280p7s.pdf
IPD60R280P7S MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.5 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the super
ipd60r600e6 ipp60r600e6 ipa60r600e6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS E6 Power Transistor IPD60R600E6, IPP60R600E6 IPA60R600E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) pri
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IPD60R460CE, IPA60R460CE MOSFET DPAK PG-TO 220 FP 600V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Ligh
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IPD60R400CE, IPS60R400CE, IPA60R400CE MOSFET DPAK IPAK SL PG-TO 220 FP 600V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applica
ipd60r2k0pfd7s.pdf
IPD60R2K0PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d
ipd60r1k0ce ipu60r1k0ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R1K0CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R1K0CE, IPU60R1K0CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio
ipd60r600e6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPD60R600E6, IPP60R600E6 IPD60R600E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ)
ipd60r360p7.pdf
IPD60R360P7 MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE
ipa60r650ce ipd60r650ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R650CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R650CE, IPA60R650CE DPAK TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio
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ipd60r950c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the supe
ipd60r280cfd7.pdf
IPD60R280CFD7 MOSFET DPAK 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications suc
ipd60r280pfd7s.pdf
IPD60R280PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d
ipd60r360p7s.pdf
IPD60R360P7S MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF
ipd60r180p7s.pdf
IPD60R180P7S MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF
ipd60r3k3c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPD60R3K3C6 Data Sheet Rev. 2.3 Final Industrial & Multimarket +
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R1K5CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R1K5CE, IPU60R1K5CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio
ipd60r280p7.pdf
IPD60R280P7 MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE
ipd60r450e6 ipp60r450e6 ipa60r450e6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R450E6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V C IMOS E6 P wer Transist r IPD60R450E6, IPP60R450E6 IPA60R450E6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superjunction (S )
ipd60r600cp.pdf
IPD60R600CP C IMOS # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO252
ipd60r210pfd7s.pdf
IPD60R210PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d
ipa60r460ce ipd60r460ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R460CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R460CE, IPA60R460CE DPAK TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio
ipd60r1k0pfd7s.pdf
IPD60R1K0PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R380P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPP60R380P6, IPA60R380P6, IPD60R380P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accor
ipb60r600p6 ipp60r600p6 ipa60r600p6 ipd60r600p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPB60R600P6, IPP60R600P6, IPA60R600P6, IPD60R600P6 D PAK TO-220 TO-220 FP 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFET
ipd60r180c7.pdf
IPD60R180C7 MOSFET DPAK 600V CoolMOS C7 Power Device CoolMOS C7 is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. 2 1 The 600V C7 is the first technology eve
ipa60r600p6 ipd60r600p6 ipp60r600p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPP60R600P6, IPA60R600P6, IPD60R600P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accor
ipd60r170cfd7.pdf
IPD60R170CFD7 MOSFET DPAK 600V CoolMOS CFD7 Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as
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CoolMOS CP 600V 600V CoolMOS CP Power Transistor IPD60R385CP Data Sheet Rev. 2.4 Final Power Management & Multimarket IPD60R385CP C IMOS # A0
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IPB60R600P6, IPP60R600P6, IPD60R600P6, IPA60R600P6 MOSFET D PAK PG-TO 220 DPAK 600V CoolMOS P6 Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli
ipd60r600p7.pdf
IPD60R600P7 MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE
ipd60r1k4c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60 1K4C6 Data Sheet ev. 2.0 2010 07 19 Final Industrial & Multimarket 600V C IMOS C6 P wer Transist r IPD60R1K4C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superjunction (S ) principle and pioneer
ipd60r950c6 ipb60r950c6 ipp60r950c6 ipa60r950c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.4 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup
ipd60r360cfd7.pdf
IPD60R360CFD7 MOSFET DPAK 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications suc
ipd60r210cfd7.pdf
IPD60R210CFD7 MOSFET DPAK 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications suc
ipd60r520cp.pdf
IPD60R520CP C IMOSTM # A0 9 688DF9>CC6CH PG TO252 7!"% # 4= /0=4290/ 1 H8=>C
ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R380C6, IPI60R380C6 IPB60R380C6, IPP60R380C6 IPA60R380C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according
ipd60r600pfd7s.pdf
IPD60R600PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d
ipd60r1k5pfd7s.pdf
IPD60R1K5PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d
ipd60r800ce ipa60r800ce.pdf
IPD60R800CE, IPA60R800CE MOSFET DPAK PG-TO 220 FP 600V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Ligh
ipd60r380e6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.5 Final Power Management & Multimarket C lMO e n i t I I I D O O D 1 Descripti n t b tab C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin iple n 2 pi neee b In ine n e n l ie C
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ipd60r145cfd7.pdf
IPD60R145CFD7 MOSFET DPAK 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications suc
ipd60r2k0c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor lPD60R2KOC6 Data Sheet Rev. 2.1 Final Industrial & Multimarket +
ipp60r380e6 ipa60r380e6 ipd60r380e6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.6 Final Power Management & Multimarket C lMO e n i t I I I D O O D 1 Descripti n t b tab C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin iple n 2 pi neee b In ine n e n l ie C
ipd60r600p7s.pdf
IPD60R600P7S MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF
ipd60r380p6.pdf
isc N-Channel MOSFET Transistor IPD60R380P6,IIPD60R380P6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc
ipd60r280p7s.pdf
isc N-Channel MOSFET Transistor IPD60R280P7S IIPD60R280P7S FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain
ipd60r450e6.pdf
isc N-Channel MOSFET Transistor IPD60R450E6,IIPD60R450E6 FEATURES Static drain-source on-resistance RDS(on) 0.45 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS
ipd60r600e6.pdf
isc N-Channel MOSFET Transistor IPD60R600E6,IIPD60R600E6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V
ipd60r360p7.pdf
isc N-Channel MOSFET Transistor IPD60R360P7,IIPD60R360P7 FEATURES Static drain-source on-resistance RDS(on) 0.36 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc
ipd60r950c6.pdf
isc N-Channel MOSFET Transistor IPD60R950C6 IIPD60R950C6 FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS
ipd60r280cfd7.pdf
isc N-Channel MOSFET Transistor IPD60R280CFD7 IIPD60R280CFD7 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
ipd60r360p7s.pdf
isc N-Channel MOSFET Transistor IPD60R360P7S,IIPD60R360P7S FEATURES Static drain-source on-resistance RDS(on) 0.36 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou
ipd60r1k5ce.pdf
isc N-Channel MOSFET Transistor IPD60R1K5CE,IIPD60R1K5CE FEATURES Static drain-source on-resistance RDS(on) 1.5 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V
ipd60r180p7s.pdf
isc N-Channel MOSFET Transistor IPD60R180P7S IIPD60R180P7S FEATURES Static drain-source on-resistance RDS(on) 0.18 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V
ipd60r3k3c6.pdf
isc N-Channel MOSFET Transistor IPD60R3K3C6,IIPD60R3K3C6 FEATURES Static drain-source on-resistance RDS(on) 3.3 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V
ipd60r3k4ce.pdf
isc N-Channel MOSFET Transistor IPD60R3K4CE,IIPD60R3K4CE FEATURES Static drain-source on-resistance RDS(on) 3.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V
ipd60r280p7.pdf
isc N-Channel MOSFET Transistor IPD60R280P7 IIPD60R280P7 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for a wide variety of applications and power ranges ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
ipd60r600cp.pdf
isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CP FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage
ipd60r380c6.pdf
isc N-Channel MOSFET Transistor IPD60R380C6,IIPD60R380C6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS
ipd60r600p6.pdf
isc N-Channel MOSFET Transistor IPD60R600P6,IIPD60R600P6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V
ipd60r1k0ce.pdf
isc N-Channel MOSFET Transistor IPD60R1K0CE,IIPD60R1K0CE FEATURES Static drain-source on-resistance RDS(on) 1 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V G
ipd60r180c7.pdf
isc N-Channel MOSFET Transistor IPD60R180C7 IIPD60R180C7 FEATURES Static drain-source on-resistance RDS(on) 0.18 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou
ipd60r170cfd7.pdf
isc N-Channel MOSFET Transistor IPD60R170CFD7,IIPD60R170CFD7 FEATURES Static drain-source on-resistance RDS(on) 170m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
ipd60r385cp.pdf
isc N-Channel MOSFET Transistor IPD60R385CP,IIPD60R385CP FEATURES Static drain-source on-resistance RDS(on) 0.385 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta
ipd60r800ce.pdf
isc N-Channel MOSFET Transistor IPD60R800CE,IIPD60R800CE FEATURES Static drain-source on-resistance RDS(on) 0.8 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V
ipd60r460ce.pdf
isc N-Channel MOSFET Transistor IPD60R460CE,IIPD60R460CE FEATURES Static drain-source on-resistance RDS(on) 0.46 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS
ipd60r400ce.pdf
isc N-Channel MOSFET Transistor IPD60R400CE,IIPD60R400CE FEATURES Static drain-source on-resistance RDS(on) 0.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V
ipd60r600p7.pdf
isc N-Channel MOSFET Transistor IPD60R600P7,IIPD60R600P7 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V
ipd60r1k4c6.pdf
isc N-Channel MOSFET Transistor IPD60R1K4C6,IIPD60R1K4C6 FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V
ipd60r600c6.pdf
isc N-Channel MOSFET Transistor IPD60R600C6,IIPD60R600C6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V
ipd60r650ce.pdf
isc N-Channel MOSFET Transistor IPD60R650CE,IIPD60R650CE FEATURES Static drain-source on-resistance RDS(on) 0.65 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS
ipd60r2k1ce.pdf
isc N-Channel MOSFET Transistor IPD60R2K1CE,IIPD60R2K1CE FEATURES Static drain-source on-resistance RDS(on) 2.1 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V
ipd60r520cp.pdf
isc N-Channel MOSFET Transistor IPD60R520CP,IIPD60R520CP FEATURES Static drain-source on-resistance RDS(on) 0.52 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag
ipd60r380e6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD60R380E6 FEATURES With TO-252(DPAK) packaging With low gate drive requirements Very high commutation ruggedness Extremely high frequency operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications LCD&PDP TV PC si
ipd60r2k0c6.pdf
isc N-Channel MOSFET Transistor IPD60R2K0C6,IIPD60R2K0C6 FEATURES Static drain-source on-resistance RDS(on) 2 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V G
ipd60r600p7s.pdf
isc N-Channel MOSFET Transistor IPD60R600P7S,IIPD60R600P7S FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS
Otros transistores... IPD60R385CP, IPD60R3K3C6, IPD60R450E6, IPD60R520C6, IPD60R520CP, IPD60R600C6, IPD60R600CP, IPD60R600E6, IRFP260, IPD60R950C6, IPD640N06LG, IPD64CN10NG, IPD65R380C6, IPD65R380E6, IPD65R600C6, IPD65R600E6, IPD65R660CFD
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