IPD90N04S4-03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD90N04S4-03

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 94 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 950 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm

Encapsulados: TO252

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IPD90N04S4-03 datasheet

 ..1. Size:152K  infineon
 ipd90n04s4-03 ipd90n04s4-03 ds 1 0.pdf pdf_icon

IPD90N04S4-03

IPD90N04S4-03 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 3.2 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4-03 PG-TO252-3-313 4N0403 Maximum ratings,

 2.1. Size:154K  infineon
 ipd90n04s4-04 ipd90n04s4-04 ds 1 0.pdf pdf_icon

IPD90N04S4-03

IPD90N04S4-04 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 4.1 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4-04 PG-TO252-3-313 4N0404 Maximum ratings,

 2.2. Size:152K  infineon
 ipd90n04s4-02 ipd90n04s4-02 ds 1 0.pdf pdf_icon

IPD90N04S4-03

IPD90N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 2.4 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4-02 PG-TO252-3-313 4N0402 Maximum ratings,

 2.3. Size:154K  infineon
 ipd90n04s4-05 ipd90n04s4-05 ds 1 0.pdf pdf_icon

IPD90N04S4-03

IPD90N04S4-05 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 5.2 m DS(on),max I 86 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4-05 PG-TO252-3-313 4N0405 Maximum ratings,

MOSTRAR MÁS

Otros transistores... IPD65R600C6, IPD65R600E6, IPD65R660CFD, IPD70P04P4-09, IPD75N04S4-06, IPD78CN10NG, IPD800N06NG, IPD90N04S4-02, NCEP15T14, IPD90N04S4-05, IPD90P04P4-05, IPD90R1K2C3, IPG20N04S4-08, IPG20N04S4-09, IPG20N04S4-12, IPG20N04S4L-07, IPG20N04S4L-08