IPG20N04S4-09 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPG20N04S4-09

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 440 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0086 Ohm

Encapsulados: TDSON84

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IPG20N04S4-09 datasheet

 ..1. Size:141K  infineon
 ipg20n04s4-09 ipg20n04s4-09 ds 1 0.pdf pdf_icon

IPG20N04S4-09

IPG20N04S4-09 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS 4) 8.6 mW R DS(on),max I 20 A D Features Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N04S4-09 PG-TDSON-8-4 4

 2.1. Size:157K  infineon
 ipg20n04s4-08 ipg20n04s4-08 ds 1 0.pdf pdf_icon

IPG20N04S4-09

IPG20N04S4-08 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS 4) 7.6 mW R DS(on),max I 20 A D Features Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N04S4-08 PG-TDSON-8-4 4

 3.1. Size:159K  infineon
 ipg20n04s4-12 ipg20n04s4-12 ds 1 0.pdf pdf_icon

IPG20N04S4-09

IPG20N04S4-12 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS 4) 12.2 mW R DS(on),max I 20 A D Features Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N04S4-12 PG-TDSON-8-4

 3.2. Size:516K  infineon
 ipg20n04s4-18a.pdf pdf_icon

IPG20N04S4-09

IPG20N04S4-18A OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on),max4) 18 mW ID 2) 20 A Features Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 1 100% Avalanche tested 8 7 6 5 Feasible for automatic optical inspe

MOSTRAR MÁS

Otros transistores... IPD78CN10NG, IPD800N06NG, IPD90N04S4-02, IPD90N04S4-03, IPD90N04S4-05, IPD90P04P4-05, IPD90R1K2C3, IPG20N04S4-08, AO4407, IPG20N04S4-12, IPG20N04S4L-07, IPG20N04S4L-08, IPG20N04S4L-11, IPG20N06S2L-35, IPG20N06S2L-50, IPG20N06S2L-65, IPG20N06S4-15