IPG20N06S4-15 Todos los transistores

 

IPG20N06S4-15 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPG20N06S4-15
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2 nS
   Cossⓘ - Capacitancia de salida: 430 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0155 Ohm
   Paquete / Cubierta: TDSON84

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IPG20N06S4-15 Datasheet (PDF)

 ..1. Size:157K  infineon
ipg20n06s4-15 ipg20n06s4-15 ds 1 0.pdf

IPG20N06S4-15
IPG20N06S4-15

IPG20N06S4-15OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDS4)15.5mWRDS(on),maxI 20 ADFeatures Dual N-channel Normal Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S4-15 PG-TDSON-8-4

 4.1. Size:196K  infineon
ipg20n06s4l-26a.pdf

IPG20N06S4-15
IPG20N06S4-15

IPG20N06S4L-26AOptiMOS-T2 Power-TransistorProduct SummaryVDS 60 VRDS(on),max4) 26mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type

 4.2. Size:158K  infineon
ipg20n06s4l-14 ipg20n06s4l-14 ds 1 0.pdf

IPG20N06S4-15
IPG20N06S4-15

IPG20N06S4L-14OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDS4)13.7mWRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S4L-14 PG-TDSON-8-4

 4.3. Size:144K  infineon
ipg20n06s4l-26 ipg20n06s4l-26 ds 1 0.pdf

IPG20N06S4-15
IPG20N06S4-15

IPG20N06S4L-26OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDS4)26mWRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S4L-26 PG-TDSON-8-4 4

 4.4. Size:294K  infineon
ipg20n06s4l-11a.pdf

IPG20N06S4-15
IPG20N06S4-15

IPG20N06S4L-11AOptiMOS-T2 Power-TransistorProduct SummaryVDS 60 VRDS(on),max4) 11.2mWID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Typ

 4.5. Size:157K  infineon
ipg20n06s4l-11 ds 1 0.pdf

IPG20N06S4-15
IPG20N06S4-15

IPG20N06S4L-11OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDS4)11.2mWRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S4L-11 PG-TDSON-8-4

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History: ATP201

 

 
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History: ATP201

IPG20N06S4-15
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