IPG20N06S4L-14 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPG20N06S4L-14

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2 nS

Cossⓘ - Capacitancia de salida: 540 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0137 Ohm

Encapsulados: TDSON84

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IPG20N06S4L-14 datasheet

 ..1. Size:158K  infineon
 ipg20n06s4l-14 ipg20n06s4l-14 ds 1 0.pdf pdf_icon

IPG20N06S4L-14

IPG20N06S4L-14 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS 4) 13.7 mW R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S4L-14 PG-TDSON-8-4

 1.1. Size:294K  infineon
 ipg20n06s4l-11a.pdf pdf_icon

IPG20N06S4L-14

IPG20N06S4L-11A OptiMOS -T2 Power-Transistor Product Summary VDS 60 V RDS(on),max4) 11.2 mW ID 20 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Typ

 1.2. Size:157K  infineon
 ipg20n06s4l-11 ds 1 0.pdf pdf_icon

IPG20N06S4L-14

IPG20N06S4L-11 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS 4) 11.2 mW R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S4L-11 PG-TDSON-8-4

 2.1. Size:196K  infineon
 ipg20n06s4l-26a.pdf pdf_icon

IPG20N06S4L-14

IPG20N06S4L-26A OptiMOS -T2 Power-Transistor Product Summary VDS 60 V RDS(on),max4) 26 m ID 20 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Type

MOSTRAR MÁS

Otros transistores... IPG20N04S4L-07, IPG20N04S4L-08, IPG20N04S4L-11, IPG20N06S2L-35, IPG20N06S2L-50, IPG20N06S2L-65, IPG20N06S4-15, IPG20N06S4L-11, AO3407, IPG20N06S4L-26, IPI100N04S3-03, IPI100N08S2-07, IPI100N10S3-05, IPI100P03P3L-04, IPI120N04S3-02, IPI120N06S4-03, IPI22N03S4L-15