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APT8028JVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT8028JVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 500 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 28 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 730 pF

Resistencia drenaje-fuente RDS(on): 0.28 Ohm

Empaquetado / Estuche: SOT227

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APT8028JVR Datasheet (PDF)

1.1. apt8028jvr.pdf Size:71K _apt

APT8028JVR
APT8028JVR

APT8028JVR 800V 28A 0.280Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche T

4.1. apt8024b2fllg.pdf Size:245K _update_mosfet

APT8028JVR
APT8028JVR

APT8024B2FLL APT8024LFLL Ω 800V 31A 0.260Ω Ω Ω Ω R B2FLL POWER MOS 7 FREDFET T-MAX™ Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses a

4.2. apt8024b2llg.pdf Size:161K _update_mosfet

APT8028JVR
APT8028JVR

APT8024B2LL APT8024LLL Ω 800V 31A 0.240Ω Ω Ω Ω R B2LL POWER MOS 7 MOSFET T-MAX™ Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses LLL

 4.3. apt8020b2llg apt8020lllg.pdf Size:157K _update_mosfet

APT8028JVR
APT8028JVR

APT8020B2LL APT8020LLL Ω 800V 38A 0.200Ω Ω Ω Ω B2LL R POWER MOS 7 MOSFET T-MAX™ TO-264 Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) LLL and Qg. Power MOS 7® combines lower conduction and switching losses

4.4. apt8020b2fllg apt8020lfllg.pdf Size:251K _update_mosfet

APT8028JVR
APT8028JVR

APT8020B2FLL APT8020LFLL Ω 800V 38A 0.220Ω Ω Ω Ω R B2FLL POWER MOS 7 FREDFET T-MAX™ Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) LFLL and Qg. Power MOS 7® combines lower conduction and switching los

 4.5. apt8024lllg.pdf Size:161K _update-mosfet

APT8028JVR
APT8028JVR

APT8024B2LL APT8024LLL Ω 800V 31A 0.240Ω Ω Ω Ω R B2LL POWER MOS 7 MOSFET T-MAX™ Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses LLL

4.6. apt8024lfllg.pdf Size:245K _update-mosfet

APT8028JVR
APT8028JVR

APT8024B2FLL APT8024LFLL Ω 800V 31A 0.260Ω Ω Ω Ω R B2FLL POWER MOS 7 FREDFET T-MAX™ Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses a

4.7. apt8024b2vfrg apt8024lvfrg.pdf Size:137K _update-mosfet

APT8028JVR
APT8028JVR

APT8024B2VFR APT8024LVFR Ω 800V 33A 0.240Ω Ω Ω Ω B2VFR POWER MOS V® FREDFET T-MAX™ TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

4.8. apt8020b2ll.pdf Size:69K _apt

APT8028JVR
APT8028JVR

APT8020B2LL APT8020LLL 800V 38A 0.200W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

4.9. apt8024b2vfr.pdf Size:39K _apt

APT8028JVR
APT8028JVR

APT8024B2VFR APT8024LVFR 800V 33A 0.240W B2VFR POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVFR • Identical Sp

4.10. apt8024jll.pdf Size:69K _apt

APT8028JVR
APT8028JVR

APT8024JLL 800V 29A 0.240W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "U

4.11. apt8024b2vr.pdf Size:37K _apt

APT8028JVR
APT8028JVR

APT8024B2VR APT8024LVR 800V 33A 0.240W B2VR POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVR • Identical Specifications

4.12. apt8024b2fll.pdf Size:70K _apt

APT8028JVR
APT8028JVR

APT8024B2FLL APT8024LFLL 800V 31A 0.240W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

4.13. apt802r4kn.pdf Size:202K _apt

APT8028JVR
APT8028JVR

Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003

4.14. apt8020jfll.pdf Size:70K _apt

APT8028JVR
APT8028JVR

APT8020JFLL 800V 33A 0.200W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with

4.15. apt8024jfll.pdf Size:70K _apt

APT8028JVR
APT8028JVR

APT8024JFLL 800V 29A 0.240W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with

4.16. apt8020jll.pdf Size:69K _apt

APT8028JVR
APT8028JVR

APT8020JLL 800V 33A 0.200W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "U

4.17. apt8024b2ll.pdf Size:69K _apt

APT8028JVR
APT8028JVR

APT8024B2LL APT8024LLL 800V 31A 0.240W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

4.18. apt8020b2fll.pdf Size:71K _apt

APT8028JVR
APT8028JVR

APT8020B2FLL APT8020LFLL 800V 38A 0.200W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

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