IPI120N06S4-03 Todos los transistores

 

IPI120N06S4-03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI120N06S4-03

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 167 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 120 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 160 nC

Resistencia drenaje-fuente RDS(on): 0.0032 Ohm

Empaquetado / Estuche: PGTO262

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IPI120N06S4-03 Datasheet (PDF)

1.1. ipp120n06s4 ipb120n06s4 ipi120n06s4-03.pdf Size:170K _infineon

IPI120N06S4-03
IPI120N06S4-03

IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.8 m? DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Mark

1.2. ipp120n06s4 ipb120n06s4 ipi120n06s4-02.pdf Size:170K _infineon

IPI120N06S4-03
IPI120N06S4-03

IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.4 m? DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking

 2.1. ipp120n04s3 ipb120n04s3 ipi120n04s3-02.pdf Size:191K _infineon

IPI120N06S4-03
IPI120N06S4-03

IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 OptiMOS-T Power-Transistor Product Summary V 40 V DS R (SMD version) 2.0 m? DS(on),max I 120 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalan

2.2. ipp120n04s4-01 ipb120n04s4-01 ipi120n04s4-01.pdf Size:159K _infineon

IPI120N06S4-03
IPI120N06S4-03

IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 OptiMOS-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.5 m? DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking

Otros transistores... GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: INK0310AP1 | INK0302AC1 | INK021AAP1 | INK0210AP1 | INK0210AC1 | INK0200AC1 | INK011BAP1 | INK0112AU1 | INK0112AM1 | INK0112AC1 | INK0103AU1 | INK0103AM1 | INK0103AC1 | INK0102AU1 | INK0102AM1 |

 

 

 
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