IPI120N06S4-03 Todos los transistores

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IPI120N06S4-03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI120N06S4-03

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 167 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 120 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 160 nC

Resistencia drenaje-fuente RDS(on): 0.0032 Ohm

Empaquetado / Estuche: PGTO262

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IPI120N06S4-03 Datasheet (PDF)

1.1. ipp120n06s4 ipb120n06s4 ipi120n06s4-02.pdf Size:170K _infineon

IPI120N06S4-03
IPI120N06S4-03

IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.4 m? DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking

1.2. ipp120n06s4 ipb120n06s4 ipi120n06s4-03.pdf Size:170K _infineon

IPI120N06S4-03
IPI120N06S4-03

IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.8 m? DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Mark

 2.1. ipp120n04s3 ipb120n04s3 ipi120n04s3-02.pdf Size:191K _infineon

IPI120N06S4-03
IPI120N06S4-03

IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 OptiMOS-T Power-Transistor Product Summary V 40 V DS R (SMD version) 2.0 m? DS(on),max I 120 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalan

2.2. ipp120n04s4-01 ipb120n04s4-01 ipi120n04s4-01.pdf Size:159K _infineon

IPI120N06S4-03
IPI120N06S4-03

IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 OptiMOS-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.5 m? DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking

Otros transistores... IPG20N06S4L-11 , IPG20N06S4L-14 , IPG20N06S4L-26 , IPI100N04S3-03 , IPI100N08S2-07 , IPI100N10S3-05 , IPI100P03P3L-04 , IPI120N04S3-02 , SPA11N60C3 , IPI22N03S4L-15 , IPI45N06S4-09 , IPI45N06S4L-08 , IPI45P03P4L-11 , IPI47N10S-33 , IPI47N10SL-26 , IPI50N10S3L-16 , IPI70N04S3-07 .

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Recientemente añadidas las descripciónes de los transistores:

MOSFET: BUZ171 | BUZ12A | BUZ12 | BUZ11AL | BUZ111SL | BUZ111S | BUZ110S | BUZ10S2 | BUZ10L | BUZ104S | BUZ104L | BUZ104 | BUZ103SL | BUZ103S-4 | BUZ103 |

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