IPI70N04S3-07 Todos los transistores

 

IPI70N04S3-07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI70N04S3-07

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 79 W

Tensión drenaje-fuente (Vds): 40 V

Corriente continua de drenaje (Id): 70 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 40 nC

Resistencia drenaje-fuente RDS(on): 0.0062 Ohm

Empaquetado / Estuche: PGTO263

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IPI70N04S3-07 Datasheet (PDF)

1.1. ipp70n04s3 ipb70n04s3 ipi70n04s3-07.pdf Size:186K _infineon

IPI70N04S3-07
IPI70N04S3-07

IPB70N04S3-07 IPI70N04S3-07, IPP70N04S3-07 OptiMOS-T Power-Transistor Product Summary V 40 V DS R (SMD version) 6.2 m? DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package

4.1. ipp70n10s3l ipb70n10s3l ipi70n10s3l-12.pdf Size:187K _infineon

IPI70N04S3-07
IPI70N04S3-07

IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS-T Power-Transistor Product Summary V 100 V DS R (SMD version) 12 m? DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Pac

4.2. ipp70n10sl-16 ipb70n10sl-16 ipi70n10sl-16.pdf Size:124K _infineon

IPI70N04S3-07
IPI70N04S3-07

IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 SIPMOS? Power-Transistor Product Summary Feature VDS 100 V N-Channel RDS(on) 16 m? Enhancement mode ID 70 A Logic Level P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175C operating temperature Avalanche rated 2 dv/dt rated 3 2 Green Package 1 (lead free) P-TO220-3-1 Type Package Ordering Code Marking IPP70N10SL-16 PG-TO220-3-1

 4.3. ipp70n10s3 ipb70n10s3 ipi70n10s3-12.pdf Size:186K _infineon

IPI70N04S3-07
IPI70N04S3-07

IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 OptiMOS-T Power-Transistor Product Summary V 100 V DS R (SMD version) 11.3 m? DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Pack

Otros transistores... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

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Recientemente añadidas las descripciónes de los transistores:

MOSFET: NVJD4152P | NVGS5120P | NVGS4141N | NVGS4111P | NVGS3443 | NVGS3441 | NVGS3136P | NVGS3130N | NVF6P02 | NVF5P03 | NVF3055L108 | NVF3055-100 | NVF2955 | NVF2201N | NVE4153N |

 

 

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