IPI70N10S3-12 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI70N10S3-12

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 940 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0116 Ohm

Encapsulados: TO262

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IPI70N10S3-12 datasheet

 ..1. Size:186K  infineon
 ipb70n10s3-12 ipi70n10s3-12 ipp70n10s3-12 ipp70n10s3 ipb70n10s3 ipi70n10s3-12.pdf pdf_icon

IPI70N10S3-12

IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 11.3 m DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanc

 4.1. Size:160K  infineon
 ipb70n10s3l-12 ipi70n10s3l-12 ipp70n10s3l-12.pdf pdf_icon

IPI70N10S3-12

IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 12 mW DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche

 4.2. Size:187K  infineon
 ipp70n10s3l ipb70n10s3l ipi70n10s3l-12.pdf pdf_icon

IPI70N10S3-12

IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 12 m DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalan

 5.1. Size:124K  infineon
 ipi70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipi70n10sl-16.pdf pdf_icon

IPI70N10S3-12

IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 SIPMOS Power-Transistor Product Summary Feature VDS 100 V N-Channel RDS(on) 16 m Enhancement mode ID 70 A Logic Level P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175 C operating temperature Avalanche rated 2 dv/dt rated 3 2 Green Package 1 (lead free) P-TO220-3-1 Type Package Ordering Code Marking IPP7

MOSTRAR MÁS

Otros transistores... IPI22N03S4L-15, IPI45N06S4-09, IPI45N06S4L-08, IPI45P03P4L-11, IPI47N10S-33, IPI47N10SL-26, IPI50N10S3L-16, IPI70N04S3-07, IRFZ48N, IPI70N10S3L-12, IPI70N10SL-16, IPI80N03S4L-03, IPI80N03S4L-04, IPI80N04S2-04, IPI80N04S2-H4, IPI80N04S3-03, IPI80N04S3-04