IPI70N10SL-16 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPI70N10SL-16
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 250 nS
Cossⓘ - Capacitancia de salida: 640 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Paquete / Cubierta: TO262
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IPI70N10SL-16 Datasheet (PDF)
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Otros transistores... IPI45N06S4L-08 , IPI45P03P4L-11 , IPI47N10S-33 , IPI47N10SL-26 , IPI50N10S3L-16 , IPI70N04S3-07 , IPI70N10S3-12 , IPI70N10S3L-12 , IRF1405 , IPI80N03S4L-03 , IPI80N03S4L-04 , IPI80N04S2-04 , IPI80N04S2-H4 , IPI80N04S3-03 , IPI80N04S3-04 , IPI80N04S3-06 , IPI80N04S3-H4 .
History: SSD20N06-90D | STU40N01 | TMD3N80G
History: SSD20N06-90D | STU40N01 | TMD3N80G



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