IPI80N04S2-04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPI80N04S2-04
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 300 W
Tensión drenaje-fuente (Vds): 40 V
Corriente continua de drenaje (Id): 80 A
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 170 nC
Resistencia drenaje-fuente RDS(on): 0.0037 Ohm
Empaquetado / Estuche: PGTO262
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IPI80N04S2-04 Datasheet (PDF)
1.1. ipp80n04s2 ipb80n04s2 ipi80n04s2-h4.pdf 
Size:190K _infineon
IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary V 40 V DS R (SMD version) 3.7 m? DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Ultra low Rds(on) 100% Avalanche tested Green product (RoHS compl
1.2. ipp80n04s3 ipb80n04s3 ipi80n04s3.pdf Size:188K _infineon
IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 OptiMOS-T Power-Transistor Product Summary V 40 V DS R (SMD version) 5.4 m? DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package
1.3. ipp80n04s4l-04 ipb80n04s4l-04 ipi80n04s4l-04.pdf Size:159K _infineon
IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.0 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking I
1.4. ipp80n04s2-04 ipb80n04s2-04 ipi80n04s2-04 green.pdf Size:159K _infineon
IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R (SMD version) 3.4 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested
1.5. ipp80n04s3 ipb80n04s3 ipi80n04s3-04.pdf Size:187K _infineon
IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS-T Power-Transistor Product Summary V 40 V DS R (SMD version) 3.8 m? DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package
1.6. ipp80n04s4-03 ipb80n04s4-03 ipi80n04s4-03.pdf Size:158K _infineon
IPB80N04S4-03 IPI80N04S4-03, IPP80N04S4-03 OptiMOS-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 3.3 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB8
1.7. ipp80n04s4-04 ipb80n04s4-04 ipi80n04s4-04.pdf Size:160K _infineon
IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04 OptiMOS-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.2 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB8
Otros transistores... IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: CS5210PBF | CS5210 | CS520 | CS5103 | CS50N80 | CS50N06D | CS50N06 | CS4N70FA9D | CS4N70ARHD | CS4N65F | CS4N65A8HD | CS4N65A4TDY | CS4N65A4HDY | CS4N65A3TDY | CS4N65A3HDY |