IPI80N04S2-04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI80N04S2-04

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 40 V

Corriente continua de drenaje (Id): 80 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 170 nC

Resistencia drenaje-fuente RDS(on): 0.0037 Ohm

Empaquetado / Estuche: PGTO262

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IPI80N04S2-04 Datasheet (PDF)

1.1. ipp80n04s2 ipb80n04s2 ipi80n04s2-h4.pdf Size:190K _infineon

IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS� Power-Transistor Product Summary V 40 V DS R (SMD version) 3.7 m? DS(on),max I 80 A D Features � N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 � Automotive AEC Q101 qualified � MSL1 up to 260�C peak reflow � 175�C operating temperature � Ultra low Rds(on) � 100% Avalanche tested � Green product (RoHS compl

1.2. ipp80n04s3 ipb80n04s3 ipi80n04s3.pdf Size:188K _infineon

IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 OptiMOS�-T Power-Transistor Product Summary V 40 V DS R (SMD version) 5.4 m? DS(on),max I 80 A D Features � N-channel - Enhancement mode � Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 � MSL1 up to 260�C peak reflow � 175�C operating temperature � Green package (RoHS compliant) � 100% Avalanche tested Type Package

1.3. ipp80n04s4l-04 ipb80n04s4l-04 ipi80n04s4l-04.pdf Size:159K _infineon

IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS�-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.0 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 � N-channel - Enhancement mode � AEC qualified � MSL1 up to 260�C peak reflow � 175�C operating temperature � Green Product (RoHS compliant) � 100% Avalanche tested Type Package Marking I

1.4. ipp80n04s2-04 ipb80n04s2-04 ipi80n04s2-04 green.pdf Size:159K _infineon

IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS� Power-Transistor Product Summary Features V 40 V DS � N-channel - Enhancement mode R (SMD version) 3.4 m? DS(on),max � Automotive AEC Q101 qualified I 80 A D � MSL1 up to 260�C peak reflow � 175�C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 � Green package (lead free) � Ultra low Rds(on) � 100% Avalanche tested

1.5. ipp80n04s3 ipb80n04s3 ipi80n04s3-04.pdf Size:187K _infineon

IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS�-T Power-Transistor Product Summary V 40 V DS R (SMD version) 3.8 m? DS(on),max I 80 A D Features � N-channel - Enhancement mode � Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 � MSL1 up to 260�C peak reflow � 175�C operating temperature � Green package (RoHS compliant) � 100% Avalanche tested Type Package

1.6. ipp80n04s4-03 ipb80n04s4-03 ipi80n04s4-03.pdf Size:158K _infineon

IPB80N04S4-03 IPI80N04S4-03, IPP80N04S4-03 OptiMOS�-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 3.3 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 � N-channel - Enhancement mode � AEC qualified � MSL1 up to 260�C peak reflow � 175�C operating temperature � Green Product (RoHS compliant) � 100% Avalanche tested Type Package Marking IPB8

1.7. ipp80n04s4-04 ipb80n04s4-04 ipi80n04s4-04.pdf Size:160K _infineon

IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04 OptiMOS�-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.2 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 � N-channel - Enhancement mode � AEC qualified � MSL1 up to 260�C peak reflow � 175�C operating temperature � Green Product (RoHS compliant) � 100% Avalanche tested Type Package Marking IPB8

Otros transistores... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

Liste

Recientemente añadidas las descripciónes de los transistores: