IPI80N04S4-04 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI80N04S4-04

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 71 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 650 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm

Encapsulados: TO262

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IPI80N04S4-04 datasheet

 ..1. Size:160K  infineon
 ipb80n04s4-04 ipi80n04s4-04 ipp80n04s4-04 ipp80n04s4-04 ipb80n04s4-04 ipi80n04s4-04.pdf pdf_icon

IPI80N04S4-04

IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.2 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type P

 2.1. Size:158K  infineon
 ipb80n04s4-03 ipi80n04s4-03 ipp80n04s4-03 ipp80n04s4-03 ipb80n04s4-03 ipi80n04s4-03.pdf pdf_icon

IPI80N04S4-04

IPB80N04S4-03 IPI80N04S4-03, IPP80N04S4-03 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 3.3 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type P

 4.1. Size:159K  infineon
 ipb80n04s4l-04 ipi80n04s4l-04 ipp80n04s4l-04 ipp80n04s4l-04 ipb80n04s4l-04 ipi80n04s4l-04.pdf pdf_icon

IPI80N04S4-04

IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.0 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Typ

 5.1. Size:187K  infineon
 ipb80n04s3-04 ipi80n04s3-04 ipp80n04s3-04 ipp80n04s3 ipb80n04s3 ipi80n04s3-04.pdf pdf_icon

IPI80N04S4-04

IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 3.8 m DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche

MOSTRAR MÁS

Otros transistores... IPI80N03S4L-03, IPI80N03S4L-04, IPI80N04S2-04, IPI80N04S2-H4, IPI80N04S3-03, IPI80N04S3-04, IPI80N04S3-06, IPI80N04S3-H4, AOD4184A, IPI80N04S4L-04, IPI80N06S2-07, IPI80N06S2-08, IPI80N06S2L-05, IPI80N06S2L-11, IPI80N06S4-05, IPI80N06S4-07, IPI80N06S4L-05